Abstract:Most papers in the area of semiconductor superlattices (SLs) are based on the assumption that the interface between the layers are sharply defined with the zero thickness so as to be devoid of any interface effects. The advanced experimental techniques may produce SL with physical interface between the two materials crystallographically abrupt, but the bonding environment of the atoms adjoining these interface will change at least on an atomic scale as the potential form changes from a well (barrier) to a barr… Show more
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