The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization

Koçyiğit, Adem; Yıldırım, Murat; Sarılmaz, Adem; Özel, Faruk

doi:10.1016/j.jallcom.2018.11.372

Cited by 35 publications

(13 citation statements)

References 44 publications

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“…According to the simple TE model, the ideality factor value should be equal to unity for an ideal device. The device parameters n and φb are calculated by using the following equations [40,41] …”

Section: Resultsmentioning

confidence: 99%

Effect of NiO_x’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures

Yılmaz

Kaçuş

Grilli

et al. 2019

Jnl of Sandwich Structures & Materials

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In this study, non-stoichiometric NiO films were obtained by using radio frequency sputtering technique to fabricate a heterojunction p–n Schottky diode. The crystal structure and topographical features of nickel oxide (NiOx) films were evaluated by means of X-ray diffraction, scanning electron microscopy and atomic force microscopy. The X-ray diffraction analysis has shown that all films have cubic polycrystalline nature, and some microstructural properties such as lattice constant, average crystallite size, micro-strain, dislocation density were changed depending on film thickness. In addition, topography of the nickel oxide films deposited with different film thickness consisted of fine nanoscale grains, showing a consistency between scanning electron microscopy and atomic force microscopy measurements. To evaluate electrical performance of NiOx films, high-quality vacuum evaporated silver (Ag) (ohmic) layer and nickel (Ni) (measurement electrode) dots were used. The current–voltage (I–V) measurements of Ni/p–NiOx/n-Si device indicated that all devices exhibit rectifying properties and these improve with the increasing film thickness. All electrical properties were correlated with the structural properties of the films to better understand transport mechanism of Ni/p–NiOx/n-Si device.

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Section: Resultsmentioning

confidence: 99%

Effect of NiO_x’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures

Yılmaz

Kaçuş

Grilli

et al. 2019

Jnl of Sandwich Structures & Materials

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“…Detailed description of XRD and EDS [14], TEM, HR-TEM, SAED pattern of the Cu 2 WSe 4 nanosheets film can be found in our previous study [15]. The C-V and G-V measurements data were obtained by Keithley 4200 SCS for various temperatures in a cryostat.…”

Section: Methodsmentioning

confidence: 99%

“…Ternary transition metal chalcogenides can be prepared by various techniques such as chemical vapor deposition or vapor transport, solvothermal, hydrothermal or hot-injection method [9][10][11][12][13]. Of the ternary transition metal chalcogenides, Cu 2 WSe 4 can absorb the light in the visible range and can be use for electronic applications [13,14].…”

Section: Introductionmentioning

confidence: 99%

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The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

Koçyiğit

Küçükçelebi

Sarılmaz

et al. 2019

J Mater Sci: Mater Electron

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Cu 2 WSe 4 nanosheets were synthesized by hot-injection method and employed as interfacial layers between the p-Si and Au metal via spin coating technique. The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed on the Cu 2 WSe 4 /p-Si heterojunction device depending on wide range temperatures from 80 to 400 K by 40 K steps. The device exhibited decreasing capacitance behavior with increasing temperature at the inversion region because of the interface states and series resistance. The conductance values increased with increasing temperature owing to increasing free charge carriers. The series resistance (R s ) and interface states density (N ss ) were extracted from C-V and G-V measurements and discussed in the details. The results highlighted that the electrical parameters are a strong function of the voltage and temperature. The Au/Cu 2 WSe 4 /p-Si device can be employed for controllable capacitor applications.

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“…These crystalline or amorphous compounds with covalent structures contain at least one of the following: S, Se, or Te (known as chalcogenide elements). Syntheses of semiconductor-based chalcogenides, such as Cu 2 XSnS 4 (X = Fe, Co, Ni, Mn, or Zn), have inspired much research on these and other related materials, and experiments to improve their properties and behavior continue to be developed [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of a Sulfur Precursor on the Hydrothermal Synthesis of Cu2MnSnS4

et al. 2021

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Cu2MnSnS4 (CMTS) is acknowledged as an alternative to traditional semiconductors. The structure and microstructure of synthetic CMTS depend on, among other things, the types of sulfur sources used. Traditionally obtained CMTS mostly has a tetragonal structure. In this study, the effect of using thiourea (Tu) or Na2S as a sulfur source on the product structure was compared using hydrothermal synthesis at 190 °C for 7 days (ethylene glycol with water in the presence of poly(vinylpyrollidone) was used as a solvent). When Tu was used, CMTS precipitated in the form of concentric microspheres, 1–1.5 µm in size, consisting of hexagonal (in the cores) and tetragonal (the rims) forms. Most probably, the rapidly formed hexagonal nucleus was later surrounded by a slower-forming rim with a tetragonal structure. In contrast, when Na2S was used as a precursor, microspheres were not formed and a fine crystalline material with a homogeneous tetragonal structure was obtained. This allowed for the choice of micromorphology and product structure during synthesis.

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The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization

Cited by 35 publications

References 44 publications

Effect of NiO_x’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures

Effect of NiO_x’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures

The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

Effect of a Sulfur Precursor on the Hydrothermal Synthesis of Cu2MnSnS4

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The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization

Cited by 35 publications

References 44 publications

Effect of NiOx’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures

Effect of NiOx’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures

The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

Effect of a Sulfur Precursor on the Hydrothermal Synthesis of Cu2MnSnS4

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Effect of NiO_x’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures

Effect of NiO_x’s film thickness on the electrical properties of Ni/p–NiOx/n-Si structures