The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

Abstract

Cu 2 WSe 4 nanosheets were synthesized by hot-injection method and employed as interfacial layers between the p-Si and Au metal via spin coating technique. The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed on the Cu 2 WSe 4 /p-Si heterojunction device depending on wide range temperatures from 80 to 400 K by 40 K steps. The device exhibited decreasing capacitance behavior with increasing temperature at the inversion region because of the interface states and series resistance. The conductance values increased with increasing temperature owing to increasing free charge carriers. The series resistance (R s ) and interface states density (N ss ) were extracted from C-V and G-V measurements and discussed in the details. The results highlighted that the electrical parameters are a strong function of the voltage and temperature. The Au/Cu 2 WSe 4 /p-Si device can be employed for controllable capacitor applications.

Refractory‐Metal‐Based Chalcogenides for Energy

“…The first report on this method was published in 1993 by Bawendi and co-workers for the colloidal synthesis of CdE (E = S, Se, Te) [61] triggered the application of the same or similar methods in many other studies for the fabrication of numerous kinds of colloidal RMCs such as MoS 2 , [62] MoSe 2 , [63] MoTe 2 , [64] WS 2 , [65] WTe 2 , [66] WSe 2 , [63,67] NbS 2 , [68] and HfS 2 . [69] A similar solutionbased strategy was used for the synthesis of NbSe 2 by Sekar et al [70] Also, ternary RMCs such as CuCrS 2 , [71] Cu 2 WS 4 , [72] and Cu 2 WSe 4 [73] were synthesized by using the colloidal synthesis method.…”

“…In the performed measurements, they found the ideality factor and barrier height values as 4.84 and 0.82 eV, respectively. [73] The study of Zhang et al illustrated that the aqueous solution of Cu 2 MoS 4 nanocube had a bandgap value of ≈1.78 eV (Figure 7) and exhibited strong absorption in the visible region of the light spectrum. [227] Han et al generated the CuCrS 2 bulk material having high electrical (between 1017 and 2980 S m −1 ), but low thermal conductivity (between 0.48 and 1.02 W m −1 K −1 ) by combining spark plasma sintering and mechanical alloying processes.…”

“…[ 69 ] A similar solution‐based strategy was used for the synthesis of NbSe 2 by Sekar et al. [ 70 ] Also, ternary RMCs such as CuCrS 2 , [ 71 ] Cu 2 WS 4 , [ 72 ] and Cu 2 WSe 4 [ 73 ] were synthesized by using the colloidal synthesis method.…”

“…In the performed measurements, they found the ideality factor and barrier height values as 4.84 and 0.82 eV, respectively. [ 73 ] The study of Zhang et al. illustrated that the aqueous solution of Cu 2 MoS 4 nanocube had a bandgap value of ≈1.78 eV (Figure 7) and exhibited strong absorption in the visible region of the light spectrum.…”

Quaternary functional semiconductor devices

“…Similar results were also reported both on current and admittance characteristics due to similar reasons by various researchers recently [24][25][26][27][28][29][30]. In addition, some researchers have been reported the surface states (N ss ) or interface traps (D it ) effects and interfacial layer on the I-V and impedance measurements (C-V and G/ω-V) both in dark and various illumination intensities of the metal/ semiconductor (MS) with and without an interfacial layer, solar cells (CSs), Field Effect Transistors (FETs), and Organic photo-detectors in the literature [31][32][33][34][35][36][37][38]. These surface states and native or deposited an interfacial layer between metal and semiconductor can be caused a large intercept voltage in the C −2 versus V plots As a result, to determine which ratios supply the better performance of MS diode, six different diodes with six different ratios functional interface layer were fabricated onto same p-Si wafer.…”