TGA and DTA studies on en and tmn complexes of Cu(II) chloride, nitrate, sulphate, acetate and oxalate

Prabhumirashi, L. S.; Khoje, J. K.

doi:10.1016/s0040-6031(01)00683-9

Cited by 37 publications

(21 citation statements)

References 27 publications

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“…However, the different ZnO films had different surface morphologies and optical band gaps due to different decomposition temperatures, as shown in Figure 2. This was also observed in a similar study by Prabhumirashi and Khoje [13], who investigated the differences among a number of Cu salts (chloride, nitrate sulfate, acetate, and oxalate) using thermogravimetric and differential thermal analysis. They explained the differences among various precursors throughout the decomposition process, which consisted of the following steps: phase change (endothermic), dehydration (endothermic), deanionation (exothermic), and oxidation (exothermic).…”

Section: Solute Engineeringsupporting

confidence: 74%

Recent advances in low-temperature solution-processed oxide backplanes

Heo

Yoon

Jung

et al. 2013

Journal of Information Display

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Applicable flexible electronics, particularly flexible displays, have been developed for next-generation devices in recent years. Sol-gel processing, for example, which uses low-temperature annealing, is a promising technique. This review article focuses on recent advances in achieving low-temperature, solution-processed oxide thin-film transistors (TFTs) through chemical and physical approaches. First, chemical approaches were overviewed in terms of solute and solvent engineering. Second, physical approaches were summarized that some researchers added energy resources except heat on the conventional sol-gel process. The additional energy sources involve microwave annealing, high-pressure annealing, and ultraviolet irradiation. This review article offers an overview of these techniques introduced in details. From these efforts, metal-oxide TFTs can be fabricated at 150 • C maintaining their device performance.

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Section: Solute Engineeringsupporting

confidence: 74%

Recent advances in low-temperature solution-processed oxide backplanes

Heo

Yoon

Jung

et al. 2013

Journal of Information Display

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“…The In(C 2 H 3 O 2 ) 3 -based TFT had the lowest mobility owing to the carbon residue in the films that did not fully decompose compared to the other ligands. 32 In addition, the oxide lattice peak (530.29 eV, O I ) in the XPS O 1s spectrum was much smaller than the hydroxide peak (532.70 eV, O III ), as shown in Figure 2. This result can be attributed to an insufficient energy supply for the dehydroxylation and carbon elimination.…”

Section: ■ Results and Discussionmentioning

confidence: 92%

Hexaaqua Metal Complexes for Low-Temperature Formation of Fully Metal Oxide Thin-Film Transistors

et al. 2015

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We investigated aqueous metal complex-based oxide semiconductor films formed with various ligands, such as chloride, acetate, fluoride, and nitrate. Nitrate ligand-based indium(III) precursor was easily decomposed at low temperature due to the replacement of all nitrate ions with water during solvation to form the hexaaqua indium(III) cation ([In(H 2 O) 6 ] 3+ ). Hexaaqua indium(III) cation was a key complex to realize high-quality oxide films at low temperature. Additionally, Al 2 O 3 -based high-k dielectric was also employed by using a nitrate precursor, and the hexaaqua aluminum(III) cation ([Al(H 2 O) 6 ] 3+ ) was confirmed. This complex-based Al 2 O 3 film showed high breakdown voltage and stable capacitance under high frequency operation compared to organic solvent-based Al 2 O 3 films. We successfully demonstrated aqueous-based In 2 O 3 TFTs with Al 2 O 3 high-k gate dielectrics formed at 250°C with a wide gate voltage operation and high saturation mobility and on/off ratio of 36.31 ± 2.29 cm 2 V −1 s −1 and over 10 7 , respectively. ■ INTRODUCTIONAmorphous metal oxide semiconductor (AOS)-based electronic devices have been developing rapidly for use as thin-film transistors (TFTs) in display backplanes, sensors, and logic devices. 1−3 In particular, the high field-effect mobility (>10 cm 2 V −1 s −1 ), transparency, and electrical stability of AOS TFTs are attractive for flexible transparent circuit applications. Recent research has focused mainly on developing new materials with high mobility and stability, diverse substrates, and facile processing methods. 4,5 Various processing methods are used to deposit AOS such as atomic layer deposition, pulsed laser deposition, sputtering, and solution process. Except for the solution process, most processes are associated with the high cost and the use of vacuum facilities. In order to consider this issue, solution processing has emerged as a future technology with simple process and low cost. Although solution processing of AOS TFTs has great potential, the electrical properties of these devices strongly depend on the processing temperature, and their electrical performances are much lower than that achieved with vacuum processing even after annealing over 450°C. To overcome this obstacle, several solutions have been proposed, including new material synthesis, 6−8 different ligandbased precursor optimization, 9 nanostructure-based film formation, 10,11 ultraviolet (UV) irradiation, 12 high pressure annealing, 13 microwave irradiation, 14 and ozone treatment. 15 A recent study of metal oxide film formed by the aqueous route showed the possibility of a low-temperature process by reducing the amount of carbon-based organic solvent, additives, and ligands in the metal precursors to lessen the detrimental effects of carbon impurities. 16,17 On the basis of an aqueous system, many kinds of metal precursors with different ligands could be selected to form metal oxide formation such as metalbased nitrate, acetate, chloride, fluoride, iodide, and so on. Besides, aqueous...

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“…It implies an imidisation reaction associated with the absorption of heat. It is known from the literature [60] that dehydration processes are generally found to spread over large temperature intervals, resulting in broad weight-loss step, in contrast to a secondary or melting transition. The dehydration reaction is reversible as it occurs both during a first and a second heating cycle through desorption of water molecules.…”

Section: Polyimide Thermal Stability and Degradationmentioning

confidence: 99%

Friction and Wear Mechanisms of Sintered and Thermoplastic Polyimides under Adhesive Sliding

Samyn

Schoukens

Verpoort

et al. 2007

Macro Materials & Eng

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Polyimides function under high‐temperature sliding. The available literature explains transitions in friction and wear mainly by mechanical effects, such as influences of normal load, sliding velocity and humidity on polymer transfer to steel counterfaces. Theoretical models are evaluated for sintered and thermoplastic polyimides. Tribologists have been interested in tribochemical and tribophysical reactions in the sliding interface for about 25 years. Reactions such as hydrolysis, imidisation and/or degradation occur as a function of sliding temperature and are reviewed in this paper. An overview of polyimide synthesis and degradation is presented, while new insights in sliding mechanisms are obtained from a detailed study of Raman spectroscopy on worn polymer surfaces.magnified image

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TGA and DTA studies on en and tmn complexes of Cu(II) chloride, nitrate, sulphate, acetate and oxalate

Cited by 37 publications

References 27 publications

Recent advances in low-temperature solution-processed oxide backplanes

Recent advances in low-temperature solution-processed oxide backplanes

Hexaaqua Metal Complexes for Low-Temperature Formation of Fully Metal Oxide Thin-Film Transistors

Friction and Wear Mechanisms of Sintered and Thermoplastic Polyimides under Adhesive Sliding

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