TFSOI technology for portable wireless communication systems

Abstract

Recent growth in the portable wireless communication market has driven semiconductor technologies toward voltage and power reduction. The reduced junction capacitance and near-ideal MOS device characteristics of SO1 provides an inherent advantage for low-voltage low-power applications. Substantial progress in applying SO1 technology for these applications has been demonstrated in recent years. The quest for a single chip system has also initiated work in developing high frequency and analog SO1 circuits. In this paper, the application of Thin-Film-Silicon-On-Insulator (TFSOI) technology for wireless communication systems will be reviewed and future development will be discussed.

Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFETs

“…2. Furthermore, in an H-gate bodygrounded SOI device [4] with good body contacts (low body discharging resistance), the overshoot noise was suppressed, demonstrating pure noise and frequency independence of the output characteristics, as shown in Fig. 3.…”

“…Therefore, low-frequency (LF) noise in CMOS, which can either directly impact homodyne receivers or enhance phase noise in oscillators [1], need to be characterized. Recently, the frequency dependence of the kink effect [2] and high resistive substrate [3] have demonstrated the potential of floating body SOI MOSFET's for the aforementioned applications [4]. However, the floating body effect induces a kink-related noise overshoot, which superimposes a Lorentzian spectrum on the flicker noise [5]- [7].…”