TFSOI complementary BiCMOS technology for low power applications

Wei, Huang; Klein, K.; Grimaldi, M. G.; Racanelli, M.; Ramaswami, S.; Tsao, J.; Foerstner, J.; Hwang, Bor-Yuan

doi:10.1109/16.368047

Cited by 25 publications

(2 citation statements)

References 13 publications

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“…The technology is based on a process with sub-0.5-m CMOS devices built on SIMOX substrates [10]. The MOSFET is laid out in a standard -parameter layout.…”

Section: Theory and Experimental Resultsmentioning

confidence: 99%

A simple method to determine the floating-body voltage of SOI CMOS devices

Imam

Fu²,

Osman³

et al. 2000

IEEE Electron Device Lett.

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A technique to extract the off-state floating-body (FB) voltage of silicon-on-insulator (SOI) CMOS devices is presented. The bias dependent -parameter measurements of a single standard FB SOI device and its equivalent circuit, along with the capacitance-voltage ( -) measurements between the drain and source of the same device, are used to determine the FB voltage. No special test structure design is needed. The technique proposes a method for the extraction of the parasitic source, drain, and gate resistances. Using the technique, FB voltage in excess of 0.4 V is measured in a partially depleted (PD) NMOS device at drain voltage of 2.5 V and zero gate voltage.

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“…The technology is based on a process with sub-0.5-m CMOS devices built on SIMOX substrates [10]. The MOSFET is laid out in a standard -parameter layout.…”

Section: Theory and Experimental Resultsmentioning

confidence: 99%

A simple method to determine the floating-body voltage of SOI CMOS devices

Imam

Fu²,

Osman³

et al. 2000

IEEE Electron Device Lett.

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“…4. Such high is an order higher than of the other LBT structures and the BV product is as high as 127.7 GHzV, which is the highest among the LBTs that have the BV GHzV [3]- [6], and comparable to the mature and optimized Si-based vertical current bipolar devices. …”

Section: Hcbt Device Performancementioning

confidence: 99%

A new HCBT with a partially etched collector

Suligoj

Biljanović

Sin

et al. 2005

IEEE Electron Device Lett.

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A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector -hill region and the self-protection of the p + extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency ( ) of 30.4 GHz, the maximum frequency of oscillations ( max ) of 35 GHz and the collector-emitter breakdown voltage (BV CEO ) of 4.2 V, which are the highest and the highest BV CEO product among the lateral bipolar transistors (LBTs).Index Terms-BiCMOS integrated circuits, bipolar transistors, chemical vapor deposition (CVD), microwave measurements, semiconductor device ion implantation, silicon-on-insulator (SOI) technology.

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Bicmos Memory Circuits

Tavrow

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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TFSOI complementary BiCMOS technology for low power applications

Cited by 25 publications

References 13 publications

A simple method to determine the floating-body voltage of SOI CMOS devices

A simple method to determine the floating-body voltage of SOI CMOS devices

A new HCBT with a partially etched collector

Bicmos Memory Circuits

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