A new HCBT with a partially etched collector

Abstract

A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector -hill region and the self-protection of the p + extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency ( ) of 30.4 GHz, the maximum frequency of oscillations ( max ) of 35 GHz and the collector-emitter breakdown voltage (BV CEO ) of 4.2 V, which are the highest and the highest BV CEO product among the lateral bipolar transistors (LBTs).Index Terms-BiCMOS integrated circuits, bipolar transistors, chemical vapor deposition (CVD), microwave measurements, semiconductor device ion implantation, silicon-on-insulator (SOI) technology.

Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

“…At first, the technology concept has been demonstrated by using coarse contact lithography having transistors of with cutoff frequency (f T ) of 4.4 GHz and collector-emitter breakdown voltage (BV CEO ) of 15.8 V [11]. In the second generation of HCBT, the 0.5 μm stepper lithography has been used reaching f T =30.4 GHz and BV CEO =4.2 V which became the fastest lateral bipolar transistor [12,13]. Finally, HCBT has been integrated with CMOS and further optimized having f T =51 GHz and BV CEO =3.4 V [5,14], which is among the fastest pure-silicon bipolar transistors reported [15].…”

A high current gain gate-controlled lateral bipolar junction transistor with 90nm CMOS technology for future RF SoC applications

“…However, for radio frequency (RF) applications, BJT is still superior to MOSFET for its well-behaved characteristics. Thus, many BJT based novel devices such as SiGe HBT, SiGe BiCMOS [1][2][3], and SOI lateral BJT [8][9][10] have been developed. Nevertheless, these devices suffer also the drawback of complicated fabrication processes, and thus resulting in a high preparing cost.…”