TFET-based cellular neural network architectures

Palit, Indranil; Hu, Xiaobo Sharon; Nahas, Joseph; Niemier, Michael

doi:10.1109/islped.2013.6629301

Cited by 24 publications

(12 citation statements)

References 18 publications

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“…These characteristics have strong impacts on the circuit and system designs, which require certain modifications of the circuit topologies (e.g., TFET SRAMs, pass-transistor logic, etc., [14]) to ensure their operations and performance benefits. Some of the characteristics, such as gated NDR, have been further explored to achieve more functionality in system designs [29].…”

Section: A the Tfet Technology For Analog/rf Applicationsmentioning

confidence: 99%

Tunnel FET RF Rectifier Design for Energy Harvesting Applications

Liu

Vaddi

et al. 2014

IEEE J. Emerg. Sel. Topics Circuits Syst.

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Radio-frequency (RF)-powered energy harvesting systems have offered new perspectives in various scientific and clinical applications such as health monitoring, bio-signal acquisition, and battery-less data-transceivers. In such applications, an RF rectifier with high sensitivity, high power conversion efficiency (PCE) is critical to enable the utilization of the ambient RF signal power. In this paper, we explore the high PCE advantage of the steep-slope III-V heterojunction tunnel field-effect transistor (HTFET) RF rectifiers over the Si FinFET baseline design for RF-powered battery-less systems. We investigate the device characteristics of HTFETs to improve the sensitivity and PCE of the RF rectifiers. Different topologies including the two-transistor (2-T) and four-transistor (4-T) complementary-HTFET designs, and the n-type HTFET-only designs are evaluated with design parameter optimizations to achieve high PCE and high sensitivity. The performance evaluation of the optimized 4-T cross-coupled HTFET rectifier has shown an over 50% PCE with an RF input power ranging from dBm to dBm, which significantly extends the RF input power range compared to the baseline Si FinFET design. A maximum PCE of 84% and 85% has been achieved in the proposed 4-T N-HTFET-only rectifier at dBm input power and the 4-T cross-coupled HTFET rectifier atdBm input power, respectively. The capability of obtaining a high PCE at a low RF input power range reveals the superiority of the HTFET RF rectifiers for battery-less energy harvesting applications.Index Terms-Energy harvesting, power conversion efficiency, radio-frequency (RF)-powered systems, RF rectifier, steep subthreshold slope, tunnel field-effect transistors (FETs), III-V semiconductor.

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Section: A the Tfet Technology For Analog/rf Applicationsmentioning

confidence: 99%

Tunnel FET RF Rectifier Design for Energy Harvesting Applications

Liu

Vaddi

et al. 2014

IEEE J. Emerg. Sel. Topics Circuits Syst.

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“…The progress in TFET modeling for circuit simulation has enabled the circuit-level and architecture-level explorations of the energy efficiency benefits of TFETs, such as TFET digital and analog circuits [16][17][18][19], TFET-CMOS heterogonous architecture [20] as well as the TFET standard cell library development [21].…”

Section: B Tunnel Fet Modeling For Circuit Simulationmentioning

confidence: 99%

Enabling Power-Efficient Designs with III-V Tunnel FETs

Kim

Liu

Swaminathan

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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III-V Tunnel FETs (TFET) possess unique characteristics such as steep slope switching, high g m /I DS , unidirectional conduction, and low voltage operating capability. These characteristics have the potential to result in energy savings in both digital and analog applications. In this paper, we provide an overview of the power efficient properties of III-V TFETs and designs at the device, circuit and architectural level.Index Terms -Steep-slope devices, ultra-low power, lowvoltage, III-V Tunnel FET (TFET).

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“…Based on the device models, various circuit designs using steep slope TFETs have been explored for ultra-low power digital and analog/RF applications [14,16,19,26] by taking advantage of the steep sub-threshold slope-induced energy efficiency benefits that these devices provide. Studies of TFET electrical noise modeling [17] and variation impacts [1,19] provide more insights for design tradeoffs between energy efficiency and reliability.…”

Section: From Device To Processor: Bottom-up Modeling Of Steep Slope mentioning

confidence: 99%

Steep Slope Devices

Swaminathan¹,

Liu²,

Li³

et al. 2014

Proceedings of the 51st Annual Design Automation Conference

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The existence of domains where traditional CMOS processors are inefficient has been well-documented in the current literature. In particular, the inefficiency of general purpose CMOS designs operating at very low supply voltages is well-known, and steep sub-threshold slope technologies, such as Tunneling Field Effect Transistors (TFETs), have been demonstrated as a viable alternative for the low-voltage operation domain. However, restricting the design space of steep slope technology-based processors to near-threshold or sub-threshold general purpose processors does the technology a disservice.Steep slope (SS) architectures can simultaneously expand the frontiers of viable computers at both ends of the energy scale: On the one hand, SS architectures enable ultra-low power sensor nodes and wearable technology, while on the other, they are applicable to high powered servers and high performance computing engines. We demonstrate the benefits of adapting this technology in such non-conventional domains, while attempting to address the major challenges encountered. We explore the effect of noise and variations at various levels of abstraction, ranging from the device to the architecture, and examine various techniques to overcome them.

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TFET-based cellular neural network architectures

Cited by 24 publications

References 18 publications

Tunnel FET RF Rectifier Design for Energy Harvesting Applications

Tunnel FET RF Rectifier Design for Energy Harvesting Applications

Enabling Power-Efficient Designs with III-V Tunnel FETs

Steep Slope Devices

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