Textured α-HgI2 ceramics for sensitive X-ray detection

Rault, Mathieu; Binet, Laurent; Gourier, Didier; Wallez, Gilles; Ponpon, J.P.; Biava, Dominique; Inglese, Jean-Marc; Barboux, P.

doi:10.1016/j.nima.2015.11.032

Cited by 5 publications

(7 citation statements)

References 42 publications

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“…However, problems still exist to grow HgI 2 crystals with suitable purity and surface morphology to be used as a room temperature radiation detector. A technological challenge remains (Martins et al, 2012, Zhaojun, et al, 2015, Rault et al, 2016, Barthaburu et al, 2016, Tyagi, 2017.…”

Section: Introductionmentioning

confidence: 99%

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Martins¹,

Santos²,

Ferraz³

et al. 2018

SET

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The effect of HgI 2 crystal encapsulation using different polymer resins, with the intent of avoiding the oxidation of the crystal surface, was evaluated in this work. The crystal was purified and grown by the physical vapor transport (PVT) technique modified. Systematic measurements were carried out for evaluating the stoichiometry, structure orientation, surface morphology and impurity of the crystal grown. The purer region of the crystal grown was selected to be prepared as a radiation detector, applying water-based conductive ink contacts and copper wire on the crystal surfaces. After that, the crystal was encapsulated with a polymeric resin which insulates atmospheric gases, aiming to improve the stability of the HgI 2 detector. Four resins were used for crystal encapslation and the performance of the detector depended on the composition of the resins used. Among the four resins studied to evaluate the influence of encapsulation on the performance of crystals, as a radiation detector, the best result of resistivity and energy spectrum was obtained for the resin #3 (50% -100% of Methylacetate and 5% -10% of n-butylacetate). The encapsulation of crystals with polymer resins, performed with the intent of avoiding the oxidation of the crystal surface, did not compromise the measurements and were fully capable of detecting the presence of gamma radiation. The stability of the encapsulated HgI2 crystal detector was of up to 78 hs, while the stability found for HgI 2 detector no encapsulated was in order 3 ~4 hs.

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Section: Introductionmentioning

confidence: 99%

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Martins¹,

Santos²,

Ferraz³

et al. 2018

SET

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“…For example, the small atomic number of Si ( Z = 14) results in low stopping power and low detection efficiency; 7 high temperature is needed for CZT preparation, 8 and HgI 2 is toxic and exhibits serious leakage current. 10 Moreover, the high processing temperatures are incompatible with the plastic substrates that are necessary for flexible applications.…”

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confidence: 99%

“…The μτ product of the (DPA) 2 BiI 9 is superior to those of the CZT and HgI 2 semiconductors, and higher than that of MAPbI 3 wafers (∼2.0 × 10 −4 cm 2 V −1 ). 8,10…”

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confidence: 99%

“…[1][2][3][4][5] X-Ray detectors can directly convert X-rays into electrical signals without relying on scintillation, 6 allowing for real-time imaging and digital processing. Although great efforts have been made to improve the performance of inorganic semiconductors for direct X-ray detection, such as silicon (Si), 7 cadmium zinc telluride (CZT), 8 amorphous selenium (a-Se), 9 and iodine mercury(II) (HgI 2 ), 10 some drawbacks still hinder their further application. For example, the small atomic number of Si (Z = 14) results in low stopping power and low detection efficiency; 7 high temperature is needed for CZT preparation, 8 and HgI 2 is toxic and exhibits serious leakage current.…”

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confidence: 99%

“…The mt product of the (DPA) 2 BiI 9 is superior to those of the CZT and HgI 2 semiconductors, and higher than that of MAPbI 3 wafers (B2.0 Â 10 À4 cm 2 V À1 ). 8,10 We fabricated a direct-conversion X-ray detector with the structure of Au/(DPA) 2 BiI 9 single crystal/Au along the c-axis (Fig. S6, ESI †) to test the X-ray response characteristics (inset image of Fig.…”

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confidence: 99%

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HgI₂nanostructures obtained hydrothermally for application in ionizing radiation detection

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et al. 2016

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Textured α-HgI2 ceramics for sensitive X-ray detection

Cited by 5 publications

References 42 publications

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

0D triiodide hybrid halide perovskite for X-ray detection

HgI₂nanostructures obtained hydrothermally for application in ionizing radiation detection

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Textured α-HgI2 ceramics for sensitive X-ray detection

Cited by 5 publications

References 42 publications

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

0D triiodide hybrid halide perovskite for X-ray detection

HgI2nanostructures obtained hydrothermally for application in ionizing radiation detection

Contact Info

Product

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HgI₂nanostructures obtained hydrothermally for application in ionizing radiation detection