HgI<sub>2</sub>nanostructures obtained hydrothermally for application in ionizing radiation detection

Barthaburu, María Pérez; Galain, Isabel; Aguiar, I.; Pereira, Heinkel Bentos; Fornaro, L.

doi:10.1088/0022-3727/49/44/445309

Cited by 5 publications

(3 citation statements)

References 24 publications

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“…The detector assembly method was selected according to the procedure mainly used for this purpose for compound semiconductor detectors [24,25]. In figure 8 a representative detector is shown along with a schematic of the detector geometry.…”

Section: Detector Assembly and Characterisationsmentioning

confidence: 99%

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Bismuth chalcohalide-based nanocomposite for application in ionising radiation detectors

Frutos

Barthaburu²,

Fornaro³

et al. 2020

Nanotechnology

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Bismuth sulpho iodide (BiSI) belongs to the family of chalcohalides, which present several attractive electro-optic properties. In particular, BiSI is a semiconductor which could be used in X and gamma ray detection due to a band gap of 1.6 eV, density of 6.4 g cm −3 , and absorption coefficient for 60 keV radiation of 5.6 cm 2 g −1 . This work presents a facile synthesis under solvothermal conditions of a nanocomposite consisting of BiSI nanorods and amorphous carbon structures. Furthermore, it studies its ionising radiation detection properties at room temperature, when prototype detectors were built from pellets. The construction conditions of pellets were also studied, varying the applied pressure and heat treatment to the nanocomposite. Dark current density and response to different exposure rates of a 241 Am source were measured for the prototype detectors built. It was found that heat treatment of pellets considerably improves detectors performance. Dark current density was one order of magnitude lower than for the pellets without heat treatment, and its response to the 241 Am source, linear, with a signal to noise ratio of 7 for 20 V. Finally, the resistivity for the heat treated detector was in the order of 10 11 Ω cm, comparable to other materials studied for this application.

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Section: Detector Assembly and Characterisationsmentioning

confidence: 99%

“…Competition with other compounds such as BiOI and Bi 19 S 27 I 3 often occurs [20][21][22], which, having different semiconductor properties, could compromise the desired application. As for the pellet detectors, while they have been scarcely reported [23,24], they have the potential of providing cheap and simple devices.…”

Section: Introductionmentioning

confidence: 99%

Bismuth chalcohalide-based nanocomposite for application in ionising radiation detectors

Frutos

Barthaburu²,

Fornaro³

et al. 2020

Nanotechnology

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“…However, problems still exist to grow HgI 2 crystals with suitable purity and surface morphology to be used as a room temperature radiation detector. A technological challenge remains (Martins et al, 2012, Zhaojun, et al, 2015, Rault et al, 2016, Barthaburu et al, 2016, Tyagi, 2017.…”

Section: Introductionmentioning

confidence: 99%

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Martins¹,

Santos²,

Ferraz³

et al. 2018

SET

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The effect of HgI 2 crystal encapsulation using different polymer resins, with the intent of avoiding the oxidation of the crystal surface, was evaluated in this work. The crystal was purified and grown by the physical vapor transport (PVT) technique modified. Systematic measurements were carried out for evaluating the stoichiometry, structure orientation, surface morphology and impurity of the crystal grown. The purer region of the crystal grown was selected to be prepared as a radiation detector, applying water-based conductive ink contacts and copper wire on the crystal surfaces. After that, the crystal was encapsulated with a polymeric resin which insulates atmospheric gases, aiming to improve the stability of the HgI 2 detector. Four resins were used for crystal encapslation and the performance of the detector depended on the composition of the resins used. Among the four resins studied to evaluate the influence of encapsulation on the performance of crystals, as a radiation detector, the best result of resistivity and energy spectrum was obtained for the resin #3 (50% -100% of Methylacetate and 5% -10% of n-butylacetate). The encapsulation of crystals with polymer resins, performed with the intent of avoiding the oxidation of the crystal surface, did not compromise the measurements and were fully capable of detecting the presence of gamma radiation. The stability of the encapsulated HgI2 crystal detector was of up to 78 hs, while the stability found for HgI 2 detector no encapsulated was in order 3 ~4 hs.

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Preparation of Nanostructured HgI2 Nanotubes/Si Photodetector by Laser Ablation in Liquid

Abd-Alrahman

Ismail

Mohammed

2022

Silicon

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In this work, HgI 2 nanotubes/Si heterojunction has been prepared by pulsed laser ablation in ethanol at laser uence of 12.7 J/cm 2 . The structural and optical properties of HgI 2 nanotubes (NTs) are studied.The X-ray diffraction (XRD) result shows the presence of the mixture of tetragonal and orthorhombic phases of HgI 2 . The optical properties results show that the optical energy gap of HgI 2 NTs was 2.98 eV measured at room temperature. The photoluminescence (PL) spectra of HgI 2 display a single emission centered at 535nm. Fourier transformed infrared (FT-IR) results reveal the existence of small bonds at 612 and 1102 cm − 1 . Scanning electron microscope (SEM) image show formation of nanotubes and spherical nanoparticles with average particle size of 23nm. Transmission electron microscope (TEM) image of HgI 2 con rms the formation of nanotubes morphology with an average diameter of 80nm and an average length of 1.6µm. The I-V curve of HgI 2 NTs/p-Si heterojunction were measured at dark and illumination.The responsivity of HgI 2 NTs/p-Si heterojunction photodetector is 1.09A/W at 450 and the detectivity and external quantum e ciency are 3.6 ×10 12 Jones at 450 and 3×10 2 % at 400nm, respectively, without using post annealing.

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HgI₂nanostructures obtained hydrothermally for application in ionizing radiation detection

Cited by 5 publications

References 24 publications

Bismuth chalcohalide-based nanocomposite for application in ionising radiation detectors

Bismuth chalcohalide-based nanocomposite for application in ionising radiation detectors

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Preparation of Nanostructured HgI2 Nanotubes/Si Photodetector by Laser Ablation in Liquid

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HgI2nanostructures obtained hydrothermally for application in ionizing radiation detection

Cited by 5 publications

References 24 publications

Bismuth chalcohalide-based nanocomposite for application in ionising radiation detectors

Bismuth chalcohalide-based nanocomposite for application in ionising radiation detectors

Optimization of the HgI2 Crystal Preparation for Application as a Radiation Semiconductor Detector

Preparation of Nanostructured HgI2 Nanotubes/Si Photodetector by Laser Ablation in Liquid

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HgI₂nanostructures obtained hydrothermally for application in ionizing radiation detection