Texture change of NiSi film with dopant implantation

Kimura, Hiroshi; Tomita, Ryuji

doi:10.1109/iitc.2011.5940331

Cited by 3 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Phosphorus has the most profound influence on the texture, as the axiotaxy has almost disappeared while a broad fiber texture develops and can only be detected on this P doped sample. In contrast, Kimura et al observed the formation of transrotational NiSi (see also Section III D 3) on B-doped Si(001) substrates with a similar doping dose as was used in our measurements, 151 suggesting that other experimental conditions are important as well. While variations in substrate and implantation conditions could be a factor here, it is likely that the annealing conditions play the critical role in the observed differences in final texture.…”

Section: A Dopantscontrasting

confidence: 47%

Texture in thin film silicides and germanides: A review

Schutter

Keyser

Lavoie

et al. 2016

Applied Physics Reviews

View full text Add to dashboard Cite

Section: A Dopantscontrasting

confidence: 47%

Texture in thin film silicides and germanides: A review

Schutter

Keyser

Lavoie

et al. 2016

Applied Physics Reviews

View full text Add to dashboard Cite

“…The thermal expansion behavior of NiSi is anisotropic; therefore, the aand c-axes contract and the b-axis expands after annealing. 17,32,33) From this viewpoint, a stress generation model in the channel region is proposed as below. Figure 13 shows the schematics of the stress generation model.…”

Section: Mechanism Of Channel Stress Generationmentioning

confidence: 99%

Analysis of Channel Stress Induced by NiPt-Silicide in Metal–Oxide–Semiconductor Field-Effect Transistor and Its Generation Mechanism

Mizuo

Yamaguchi

Kudo

et al. 2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Channel stress induced by NiPt-silicide films in metal–oxide–semiconductor field-effect transistors (MOSFETs) was demonstrated using UV-Raman spectroscopy, and its generation mechanism was revealed. It was possible to accurately measure the channel stress with the Raman test structure. The channel stress depends on the source/drain doping type and the second silicide annealing method. In order to discuss the channel stress generation mechanism, NiPt-silicide microstructure analyses were performed using X-ray diffraction analysis and scanning transmission electron microscopy. The channel stress generation mechanism can be elucidated by the following two factors: the change in the NiSi lattice spacing, which depends on the annealing temperature, and the NiSi crystal orientation. The analyses of these factors are important for controlling channel stress in stress engineering for high-performance transistors.

show abstract

NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

Mizuo¹,

Yamaguchi²,

Pagès³

et al. 2015

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Pt-doped Ni (NiPt) silicide agglomeration in terms of NiSi crystal orientation, Pt segregation at the NiSi/Si interface, and residual stress is studied for the first time. In the annealing of Ni monosilicide (NiSi), the growth of NiSi grains whose NiSi b-axes are aligned normal to Si(001) [NiSi(010) k Si(001)] with increasing Pt segregation at the NiSi/Si interface owing to a high annealing temperature was observed. The residual stress in NiSi(010) k Si(001) grains also increases with increasing annealing temperature. Furthermore, the recrystallization of NiSi(010) k Si(001) grains with increasing residual stress continues through additional annealing after NiSi formation. After the annealing of NiSi(010) k Si(001) grains with their strain at approximately 2%, the start of NiPt silicide agglomerates accompanied by stress relaxation was observed. This preferential recrystallization of NiSi(010) k Si(001) grains with increasing residual stress is considered to enhance the NiPt silicide agglomeration.

show abstract

Texture change of NiSi film with dopant implantation

Cited by 3 publications

References 6 publications

Texture in thin film silicides and germanides: A review

Texture in thin film silicides and germanides: A review

Analysis of Channel Stress Induced by NiPt-Silicide in Metal–Oxide–Semiconductor Field-Effect Transistor and Its Generation Mechanism

NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

Contact Info

Product

Resources

About