NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains

Abstract

Pt-doped Ni (NiPt) silicide agglomeration in terms of NiSi crystal orientation, Pt segregation at the NiSi/Si interface, and residual stress is studied for the first time. In the annealing of Ni monosilicide (NiSi), the growth of NiSi grains whose NiSi b-axes are aligned normal to Si(001) [NiSi(010) k Si(001)] with increasing Pt segregation at the NiSi/Si interface owing to a high annealing temperature was observed. The residual stress in NiSi(010) k Si(001) grains also increases with increasing annealing temperature. Furthermore, the recrystallization of NiSi(010) k Si(001) grains with increasing residual stress continues through additional annealing after NiSi formation. After the annealing of NiSi(010) k Si(001) grains with their strain at approximately 2%, the start of NiPt silicide agglomerates accompanied by stress relaxation was observed. This preferential recrystallization of NiSi(010) k Si(001) grains with increasing residual stress is considered to enhance the NiPt silicide agglomeration.

Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

“…Because the molten layer is produced by the simultaneous formation of Ni 1– x Pt x Si and the MSA temperature is less than the melting temperature of the Si substrate, the overall composition and thickness of the quenched Ni 1– x Pt x Si film would be similar to those of the RTP sample. When the MSA temperature was less than the melting point of Ni 1– x Pt x Si (e.g., the MSA sample annealed at 950 °C), the sample might follow the typical formation kinetics of a polycrystalline film with many grain boundaries and lead to an R s increase due to agglomeration (see Figures and ), consistent with previous observations. − , …”

Impact of microwave annealing on advanced junction technology

“…Figure 2 shows the increasing ratio of sheet resistance (R s ) with various T NiPtSi as a function of additional annealing temperature. An increase in R s is observed with an increase in annealing temperature due to the agglomeration of NiPt silicide accompanied by stress relaxation in NiSi(010) // Si(001) grains [2], and its temperature decreases with thin T NiPtSi . This instability of NiPt silicide in scaled CMOS is a serious issue.…”