Ultra-low Contact Resistivity of PtHf Silicide Utilizing Dopant Segregation Process

Improvement of contact resistivity of titanium silicide on P-doped epitaxial Si using a Se interlayer

“…[14][15][16][17][18] Several studies have been conducted to achieve a high doping concentration of phosphorus, such as with additional ion implantation for low contact resistivity. 19,20) However, the ion implantation process inevitably damages the substrate. A layer doped with ion implantation has disadvantages of a broader distribution of contact resistivity and a rougher interface and silicide surface than that in the in situ phosphorus-doped (ISPD) epitaxial Si layer.…”