Ternary alloy films of Ni-Cr-Al for thin film resistors

Schippel, E.

doi:10.1016/0040-6090(87)90214-8

Cited by 10 publications

(3 citation statements)

References 11 publications

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“…Chromium is a well known nickel additive [20][21][22]. It has a much higher melting temperature (Tm Cr =1,857°C) compared to Ni (Tm Ni =1,453°C) and a negative enthalpy of mixing with Ni and Ti.…”

Section: Introductionmentioning

confidence: 99%

Effect of Cr additions on the microstructural stability of Ni electrodes in ultra-thin BaTiO3 multilayer capacitors

et al. 2007

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Microstructural control in thin-layer multilayer ceramic capacitors (MLCC) is one of the present day challenges to maintain an increase in capacitive volumetric efficiency. This present paper opens a series of investigations aimed to engineer the stability of ultra-thin Ni electrodes in BaTiO 3 -based multilayer capacitors using refractory metal additions to Ni. Here, pure Ni and Ni-1 wt.% Cr alloy powders are used to produce 0805-type BME MLCCs with 300 active layers and with dielectric and electrode layer thickness around 1 μm. To investigate the continuity of Ni electrodes, both MLCC chips with pure and doped electrodes were sintered at different temperatures for 5 h. It is found that the continuity of Ni electrodes is improved most likely due to the effect of Cr on the lowmelting point (Ni,Ba,Ti) interfacial alloy layer formation. The interfacial alloy layer is not observed when Cr is segregated at Ni-BaTiO 3 interface in the Cr-doped samples, while it is found in all undoped samples. The interfacial alloy layer is believed to increase mass-transfer along the Ni-BaTiO 3 interfaces facilitating an acceleration of Ni electrodes discontinuities.

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Section: Introductionmentioning

confidence: 99%

Effect of Cr additions on the microstructural stability of Ni electrodes in ultra-thin BaTiO3 multilayer capacitors

et al. 2007

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“…Much work has been published on Ni-Cr films in discrete resistors [4,5]. The TCR control of the Ni-Cr resistors by using Au, Al and O 2 as dopants in films has been extensively discussed [6,7]. Effects of substrate nature [8,9] or resistor-conductor combination on the effective TCR of the resistors have also been theoretically and experimentally dealt with and reported in literature [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Ni–Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

et al. 2006

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“…Aluminum has also been added to Ni-Cr alloy material to reduce its annealing temperature and obtain a near-zero temperature coefficient of resistance. [17][18][19][20][21] Many studies have been focused on how adding small amounts of aluminum would affect the electrical property and how different annealing temperatures would affect the structure of the NiCrAl thin film. However, few studies have considered the relationship between NiCrAl thin films' composition and the electrical property under varying annealing temperatures.…”

Section: Introductionmentioning

confidence: 99%

Annealing effect on the electrical properties and composition of a NiCrAl thin film resistor

Chuang

Lin

Chen³

2015

Jpn. J. Appl. Phys.

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The composition of NiCrAl thin film resistors, under different annealing conditions in a N 2 atmosphere, was investigated. The Auger electron spectrum (AES) has been used in studying the composition of NiCrAl thin films. The concentration ratio of Cr to Ni decreases when the annealing temperature increases. The electrical properties of a NiCrAl thin film resistor are affected by the concentrations of Cr and Ni, which lead to a higher temperature coefficient of resistance (TCR) and a lower sheet resistivity. The TCR of a NiCrAl thin film resistor is %5 ppm/°C at a 250 °C annealing temperature.

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Ternary alloy films of Ni-Cr-Al for thin film resistors

Cited by 10 publications

References 11 publications

Effect of Cr additions on the microstructural stability of Ni electrodes in ultra-thin BaTiO3 multilayer capacitors

Effect of Cr additions on the microstructural stability of Ni electrodes in ultra-thin BaTiO3 multilayer capacitors

Ni–Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

Annealing effect on the electrical properties and composition of a NiCrAl thin film resistor

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