Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56μm pulse excitation

Takazato, A.; Kamakura, M.; Matsui, Takashi; Kitagawa, Jiro; Kadoya, Y.

doi:10.1063/1.2754370

Cited by 91 publications

(54 citation statements)

References 16 publications

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“…The presence of dislocations in this material system, which are formed to relax stress, increase the interface roughness and therefore the drop of the mobility is associated with the latter scattering mechanism. The post growth annealing effect is more pronounced as the resistivity increases almost two orders of magnitude making the material highly resistive and therefore measurements could not be made at temperatures below 220 K. At high temperatures, the material remains highly resistive, ∼10 5 / sq, and the conductivity increases one order of magnitude. Such results indicate the possibility of the fabrication of efficient THz devices operating at 1 μm excitation wavelength.…”

Section: B Temperature Dependence Of Transport Propertiesmentioning

confidence: 99%

“…[1][2][3][4][5] The key reason for this is the formation of point defects in the crystal, which arises from the excess arsenic atoms incorporated during the low temperature growth. 6 The latter results in unique material properties such as very short carrier recombination times and high sheet resistances, which are desirable features for efficient terahertz photoconductors.…”

Section: Introductionmentioning

confidence: 99%

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Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors

Kostakis

Missous

2013

AIP Advances

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Recently, detailed characterisation of materials and evaluation of devices based on low temperature (LT) grown InGaAs-InAlAs and GaAs-based terahertz (THZ) photoconductors using the Molecular Beam Epitaxy (MBE) technique have been reported by our group. In this work, the characterisation is extended in order to study the growth reproducibility of the photoconductors and the temperature dependence of their transport properties. We show that the structural, optical and transport characteristics of a photoconductor can be optimised by growing the same structure under the same growing conditions but in different MBE systems. The Hall Effect measurements over the temperature range of 100 K–400 K revealed temperature independency of the mobility within a wide range, in which the concentration is changing with the temperature. The majority of carriers are found to be electrons even in the case of Be doped samples, which is attributed to the large density of excess As anti-site atoms. The transport properties of low temperature grown materials are presented for the first time and the behaviour is found to be different to those of conventional materials, which are grown under normal growth conditions

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Section: B Temperature Dependence Of Transport Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors

Kostakis

Missous

2013

AIP Advances

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“…В отличие от широко используемого LT GaAs, фо-топроводник In x Ga 1−x As позволяет работать с бо-лее длинноволновой оптической накачкой в диапазоне 1.0−1.6 мкм [6,7], излучаемой волоконными лазерны-ми системами или лазерами на неодимовом стекле, подходящими для реализации недорогих и компакт-ных устройств. При поглощении оптического импуль-са в приповерхностном слое In x Ga 1−x As рождаются электронно-дырочные пары, которые ускоряются встро-енным электрическим полем, возникающим в области искривления границ запрещенной зоны вблизи поверх-ности полупроводника [8,9].…”

Section: Introductionunclassified

“…Наиболее распространенными фотопроводящими ис-точниками ТГц излучения являются фотопроводящие антенны (ФА), в которых ускорение фотовозбужден-ных носителей заряда достигается за счет приложения внешнего электрического поля [10,11]. Для увеличения мощности генерации ТГц излучения требуется, чтобы фотопроводящий слой ФА имел высокое сопротивление.…”

Section: Introductionunclassified

Генерация терагерцового излучения при облучении фемтосекундными лазерными импульсами In-=SUB=-0.38-=/SUB=-Ga-=SUB=-0.62-=/SUB=-As, выращенного на подложке GaAs с метаморфным буферным слоем

Пономарев¹,

Хабибуллин²,

Ячменев³

et al. 2017

Физика И Техника Полупроводников

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Приведены результаты исследований генерации терагерцового (ТГц) излучения с помощью спектроскопии с временным разрешением в структуре с фотопроводящим слоем In 0.38 Ga 0.62 As. Исследуемая структура, выращенная методом молекулярно-лучевой эпитаксии на подложке GaAs с помощью метаморфного буфера, позволяет генерировать ТГц излучение с широким спектром частот (вплоть до 6 ТГц). Это связано с дополнительным вкладом фотовольтаического эффекта Дембера в генерацию ТГц излучения. Измеренная эффективность оптико-терагерцового преобразования в такой структуре составляет ∼ 10 −5 при достаточно малом оптическом флюенсе ∼ 40 мкДж/см 2 , что почти на два порядка выше, чем в " низкотемператур-ном" GaAs.

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“…12,13 Low-temperature growth of InGaAs with additional Be-doping also enhances the resistivity. 9,14 In this letter we present a terahertz emitter which overcomes the resistivity limit of previous photoconductive switches based on InGaAs. Recently we demonstrated the efficient generation of terahertz radiation by lateral photoDember currents induced in GaAs and InGaAs based emitters pumped with a Ti:sapphire laser.…”

mentioning

confidence: 99%