Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

Mueller, Stefan; Summerfelt, Scott R.; Müller, Johannes; Schroeder, Uwe; Mikolajick, Thomas

doi:10.1109/led.2012.2204856

Cited by 148 publications

(74 citation statements)

References 14 publications

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“…For ferroelectric Si:HfO 2 thin films, the polarization reversal dynamics have been investigated using pulse switching tests at RT. At relatively low fields, the switching process was found to be very slow, with a steady increase of the switched polarization continuing over many time decades [15,22]. The experimental evidence suggests that the switching process follows the nucleation-limited-switching (NLS) mechanism proposed by Tagantsev et al [23].…”

Section: 2mentioning

confidence: 90%

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

et al. 2015

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HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E < twofold coercive field, 2E(c)), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (E > 2E(c)), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0 MV/cm, which translates into a 2.0 V potential applied across the 10 nm thick films

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Section: 2mentioning

confidence: 90%

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

et al. 2015

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“…The length of the channel is 200 nm to suppress short channel effects, the doping concentration of the lightly doped channel is 5 Â 10 14 cm À3 , the highly doped pþ source concentration is 1 Â 10 20 cm À3 and the nþ doped drain is 1 Â 10 18 cm À3 to eliminate the ambipolar behavior [13]. The silicon-doped HfO 2 is utilized as ferroelectric layer due to its unique property of exhibiting the ferroelectricity even in a 5 nm thick, thin film [14,15]. For the model verification, we have used 10 nm of Si:HfO 2 with 9 lC=cm 2 remanent polarization and 1.1 mV/cm coercive field [6].…”

Section: Approach and Definitionsmentioning

confidence: 99%

“…Unique properties of the ferroelectric Si:HfO 2 like relatively low dielectric constant, CMOS compatibility, good interface with the silicon [7], and relatively high remanent polarization even in a 5 nm thick, thin film [15] make it a promising candidate for the fabrication of future nonvolatile memories [28,6].…”

Section: Nanometer Scale Fe-tfetmentioning

confidence: 99%

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Saeidi

Biswas

Ionescu

2016

Solid-State Electronics

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a b s t r a c tThe implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO 2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect transistor (Fe-TFET) can operate as ultra-low power nonvolatile memory even in aggressively scaled dimensions. A Fe-TFET analytical model is derived by combining the pseudo 2-D Poisson equation and Maxwell's equation. The model describes the Fe-TFET behavior when a time-dependent voltage is applied to the device with hysteretic output characteristic due to the ferroelectric's dipole switching. The theoretical results provide unique insights into how device geometry and ferroelectric properties affect the Fe-TFET transfer characteristic. The recently explored ferroelectric, silicon-doped HfO 2 is employed as the gate ferroelectric. With the ability to engineer ferroelectricity in HfO 2 thin films, a high-K dielectric well established in memory devices, the silicon-doped HfO 2 opens a new route for improved manufacturability and scalability of future 1-T ferroelectric memories. In the current research, a Si:HfO 2 based Fe-TFET with large memory window and low power dissipation is designed and simulated. Utilizing our presented model, the device characteristics of a Fe-TFET that takes full benefits from Si:HfO 2 is compared with the same devices using well-known perovskite ferroelectrics. Finally, the Fe-TFET is compared with a conventional ferroelectric memory transistor highlighting the advantages of using tunneling memory devices.

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“…Additionally, HfO 2 -based ferroelectrics such as Si-doped HfO 2 ultrathin films (10 nm), which can be deposited into high-aspect-ratio geometries with exceptional scalability and CMOS compatibility, should have great potential to enable the development of next-generation 3D FRAM capacitors [486,487]. Low access energy nonvolatile memory is also a target in FRAM devices, with challenges being encountered in sensing data at low power supply voltage.…”

Section: Applicationsmentioning

confidence: 99%

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

et al. 2014

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Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted.

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Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors

Cited by 148 publications

References 14 publications

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

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