Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer

Dewan, Namrata; Tomar, Monika; Gupta, Vinay; Sreenivas, K.

doi:10.1063/1.1944231

Cited by 22 publications

(18 citation statements)

References 7 publications

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“…For example, in surface acoustic wave ͑SAW͒ frequency filters, thermal effects are a primary cause of device failure, and there is great interest in developing temperature-compensated systems. 4 Recently, a prototype SAW filter was fabricated using ferroelectric domain structures in PbZr 0.2 Ti 0.8 O 3 as 1 -4 GHz range "piezoelectric interdigitated transducers" ͑PIT͒ ͑Ref. 5͒.…”

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confidence: 99%

High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

Paruch

Triscone

2006

Applied Physics Letters

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Using high-resolution atomic force microscopy, we have shown extremely high stability of linear ferroelectric domains in epitaxial PbZr 0.2 Ti 0.8 O 3 thin films heated up to 735°C, a significant advantage for technological applications. An elevated transition temperature ϳ785°C is observed even in relatively thick ͑91 nm͒ films, despite relaxation of in-plane film-substrate lattice-mismatch-induced strain. We also demonstrate the negligible role of the film surface in determining the written domain-wall configuration, both by direct comparison of the surface roughness with domain-wall position at successive thermal cycles, and by measurements of domain-wall dynamics before and after heating. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2196482͔The diverse electronic and mechanical properties of ferroelectric perovskites make them particularly interesting for multifunctional devices in which their piezoelectric and pyroelectric properties, as well as their switchable ferroelectric polarization, can be exploited. In addition, local control of polarization by atomic force microscopy ͑AFM͒, combined with oxide growth techniques by which epitaxial single-crystal quality thin films of these materials can be grown on numerous substrates, 1,2 including silicon, 3 allows significant gains to be envisaged in application parameters, such as frequency or information density. An important consideration for devices is thermal stability. For example, in surface acoustic wave ͑SAW͒ frequency filters, thermal effects are a primary cause of device failure, and there is great interest in developing temperature-compensated systems. 4 Recently, a prototype SAW filter was fabricated using ferroelectric domain structures in PbZr 0.2 Ti 0.8 O 3 as 1 -4 GHz range "piezoelectric interdigitated transducers" ͑PIT͒ ͑Ref. 5͒. This material, unlike many standard piezoelectrics, shows a positive temperature coefficient of delay of the transverse vibrational mode resonant frequency. Its use in combination with a negative-temperature-coefficient-of-delay substrate could thus allow compensation of quasistatic thermal effects, provided the ferroelectric domain structures remain stable in the −20-100°C range particularly important for applications. Investigating the effects of heating on ferroelectric domains in epitaxial thin films is thus of obvious practical importance. To understand these effects at the nanometer scale required for miniaturized devices, such studies should focus in particular on domain walls, whose static and dynamic behavior determines the stability and growth of domains in ferroelectric materials.We have recently shown that ferroelectric domain walls in epitaxial thin films are well described as elastic interfaces in the presence of random bond disorder and dipolar interactions, 6 within the theoretical framework developed for elastic objects in random media. 7 In such systems, domain walls are pinned by disorder, although a thermally activated nonlinear response is possible even for subcritical forces. However, the...

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confidence: 99%

High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

Paruch

Triscone

2006

Applied Physics Letters

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“…On the other hand, highly C-axis oriented AlN film is not readily grown and zero TCD has not been reported yet. Recently amorphous TeO 2 film is reported to have a negative TCD too [3]. The experimental results demonstrate that zero TCD is achived on 128 LiNbO 3 substrate with much thinner TeO 2 film than SiO 2 film.…”

Section: Introductionmentioning

confidence: 90%

P3I-5 Study on SAW Characteristics of Amorphous- TeO2/128°Y-X LiNbO3 Structures

Shang

Gong

Xiong

et al. 2007

2007 IEEE Ultrasonics Symposium Proceedings

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Theoretical calculations have been performed for the temperature stability of the amorphous TeO 2 /128 Y-X LiNbO3 structure. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. Amorphous TeO 2 film has been found as an attractive negative TCD over-layer that can yield a zero TCD when combined with a positive TCD material such as 128 Y-X LiNbO3. And in comparison to conventional SiO 2 over-layer, the amorphous TeO 2 film reaches the zero TCD under a much less thickness. The effect of the temperature coefficients of amorphous TeO 2 's elastic constants on the structure's TCD has also been studied. We find the temperature coefficients of amorphous TeO 2 's C 11 have a more dominant effect on TCD.

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“…The device can be made temperature stable by integrating it with negative TCD over layer. TeO 3 films are reported to exhibit negative temperature coefficient of delay [1,[18][19][20][21] and, thus, can be used in the present layered structure to make it temperature stable. The proposed BeO (0.08 λ)/128 • YX LiNbO 3 bilayer SAW structure is integrated with ∼0.026 λ thick TeO 3 over layer to realize a temperature stable device and moreover, the values of SAW phase velocity and electromechanical coupling coefficient remain essentially untouched.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films

Soni

Bhola

2021

Crystals

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The present study depicts the first-ever optimized surface acoustic wave (SAW) device based on Beryllium Oxide (BeO) thin film. The feasibility of surface acoustic wave devices based on BeO/128° YX LiNbO3 layered structure has been examined theoretically. The SAW phase velocity, electromechanical coupling coefficient, and temperature coefficient of delay for BeO/128° YX LiNbO3 layered structure are calculated. The layered structure is found to exhibit optimum value of phase velocity (4476 ms−1) and coupling coefficient (~9.66%) at BeO over layer thickness of 0.08λ. The BeO (0.08λ)/128° YX LiNbO3 SAW device is made temperature stable, by integrating it with negative temperature coefficient of delay (TCD) TeO3 over layer of thickness 0.026λ.

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Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer

Cited by 22 publications

References 7 publications

High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

P3I-5 Study on SAW Characteristics of Amorphous- TeO2/128°Y-X LiNbO3 Structures

Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films

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Temperature stable LiNbO3 surface acoustic wave device with diode sputtered amorphous TeO2 over-layer

Cited by 22 publications

References 7 publications

High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

High-temperature ferroelectric domain stability in epitaxial PbZr0.2Ti0.8O3 thin films

P3I-5 Study on SAW Characteristics of Amorphous- TeO2/128&#x000B0;Y-X LiNbO3 Structures

Enhanced Properties of SAW Device Based on Beryllium Oxide Thin Films

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P3I-5 Study on SAW Characteristics of Amorphous- TeO2/128°Y-X LiNbO3 Structures