Temperature interaction of Early voltage, current gain and breakdown characteristics of npn and pnp SiGe HBTs on SOI

Abstract

We present a comprehensive investigation of temperature dependence of breakdown voltage, DC current gain (ȕ), and Early voltage (V A ) for complementary SiGe-npn and SiGe-pnp bipolar transistors fabricated on an advanced CBiCMOS technology on thick-film SOI.Both SiGe-npn and SiGe-pnp transistors show decreasing V A as ambient operating temperature increases from -60ºC to +200ºC for low collector current densities (J C 5.0 μA/μm 2 ) with a near linear inverse temperature (1/T) relationship. We also demonstrate in the region historically defined by weak self-heating interactions that V A maintains minimal sensitivity to operating temperature.