Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors

Florovic, M.; Stoklas, R.; Kováč, J.; Kordoš, P.

doi:10.1088/1361-6641/aa5253

Cited by 7 publications

(6 citation statements)

References 16 publications

(21 reference statements)

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“…16 However, high frequency C-V or conductance measurement has some limitations since the emission time constants of the trap states were over a broad range, the static test of temperature-induced instability of the threshold voltage is more appropriate. 17,18 Because of the ability of GaN material to withstand high temperatures, extensive reliability studies are present in literature for high temperature applications. 19 With the extensive applications of power devices at very low temperature, 20,21 such as deep space exploration et al, it is of great important also to investigate low temperature reliability behavior of GaN based HEMT.…”

Section: Introductionmentioning

confidence: 99%

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Iervolino

2017

AIP Advances

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Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is presented in this paper. The nitrogen vacancy near to the AlGaN/GaN interface leads to threshold voltage of stress-free sample shifting positively at low temperature. The anomalous behavior of threshold voltage variation (decrease first and then increase) under gate stressing as compared to stress-free sample is observed when lowing temperature. This can be correlated with the pre-existing electron traps in SiNX layer or at SiNX/AlGaN interface which can be de-activated and the captured electrons inject back to channel with lowering temperature, which counterbalances the influence of nitrogen vacancy on threshold voltage shift.

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Section: Introductionmentioning

confidence: 99%

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Iervolino

2017

AIP Advances

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“…Temperature dependence of the threshold voltage ( V th ) can be used to evaluate the trapping state properties of GaN‐based HFETs and MOSHFETs devices . The changes of the threshold voltage with temperature can indicate on the effect of thermal activation of trap states to be presented in the layer structure of these devices, i.e., AlGaN barrier layer, gate bulk oxide, and gate oxide/AlGaN interface.…”

Section: Resultsmentioning

confidence: 99%

Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

Lalinský

Vanko

Dobročka

et al. 2017

Physica Status Solidi (a)

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The fabrication and characterization of the sequentially evaporated Ir/Al multilayer gates of AlGaN/GaN circular high electron mobility transistors formed by high temperature oxidation is reported. Annealing at temperature of 800 °C, for 60 s in O2 ambient makes possible to form a sharp gate interface with a high Schottky barrier height at RT (φb = 1.2 eV). It is also shown that high temperature oxidation can be an effective approach in reducing of both the gate and drain leakage currents of high electron mobility transistors (more than six orders). A comprehensive microstructural, electrical, and electro‐thermal characterization of the Ir/Al gates is carried out to study the thermal stability of the gate interface and high temperature performance of the devices. Stable operation of the devices with multilayer Ir/Al gates in the temperature range up to 500 °C is demonstrated. Here, it is proposed that the thermal stability of the interface is controlled by the formed aluminum oxide interfacial layer. Finally, perfectly clear pinch‐off characteristics and thermally induced threshold voltage (Vth) instability as low as −0.58 mV °C−1 are achieved.

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“…V TH and thermal coefficient k VTH =dV TH /dT reflect the sheet carrier concentration, built-in potential of Schottky barrier as well as pn-junction or metal-oxide gate potential and carrier trapping under the gate [9,10]. In general the trapped charge has influence on vertical electric field under the gate which results in I D time change [11,12]. Various methods to determine R S , R D , R C temperature dependence are already published [13][14][15][16], e.g.…”

Section: Threshold Voltage and Source/drain/contact Resistance Determ...mentioning

confidence: 99%

Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

Florovic

Szobolovszký

Kováč

et al. 2019

Semicond. Sci. Technol.

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This paper proposes a novel method of average channel temperature and channel temperature profile determination is discussed in theoretical part and subsequently applied to InAlN/AlN/ GaN HEMT using quasi-static I-V characterization supported by thermal 3D FEM simulations. Experimentally was determined HEMT source resistance and threshold voltage from low-power output and transfer I-V characteristics at different thermal chuck temperatures. The HEMT channel average temperature nearly 88 °C for dissipated power 2 W was calculated taking advantage of the drain current change analysis applied in recurrent differential form. Additionally, the HEMT channel temperature profile was simulated utilizing the calculated channel dissipated power density.

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Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors

Cited by 7 publications

References 16 publications

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

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