Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Iervolino, E.

doi:10.1063/1.4997384

Cited by 8 publications

(3 citation statements)

References 30 publications

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“…Therefore, characterization at various temperatures has been performed from 80 K to 350 K. The negative bias temperature instability (NBTI) is noticeable through the thermal drift in the threshold voltage as evidenced in Figure 6.b. This NBTI has been previously reported, and it was associated with nitrogen vacancies near the AlGaN/GaN [7] interface or at the AlGaN surface [8]. However, an hysteresis is experienced on the IGS-VGS plots (and thus in the drift magnitude of Vth), according to the increasing or decreasing sweep of VGS, as depicted in Figure 7.…”

Section: Time Domain Characterizationsupporting

confidence: 65%

Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations

Tartarin

Lazăr

Rumeau

et al. 2020

Microelectronics Reliability

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The charges in wide bandgap Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) can be identified by means of various methods such as electrical transient and pulsed measurements, or noise spectroscopy methods, usually performed at different temperatures to extract activation energies. These traps can be passivated or activated according to electrical or thermal conditions over the lifetime. Therefore, the distinction between harmful traps (with consequences on performances) and harmless traps (without impact on electrical behaviour) must be performed. In this paper, devices stressed by HTOL (High Temperature Operating Life) are characterized by time domain electrical techniques (transient and pulsed), and with low frequency noise (LFN) experimental tools. By performing characterizations on the gate and on the drain, it is also possible to identify the drain current sensitivity to charges located in specific regions of the transistor (command or channel zones). The proposed case study discriminates the traps in the GaN buffer and at the vicinity of the AlGaN/GaN interface. The HTOL stress impacts the traps at the interface border zone in the AlGaN layer. This causes a drift in the threshold voltage Vth, also with a hysteresis depending on direction of increasing or decreasing sweep of the gate voltage during the characterization. Also the Schottky diode leakage current profile at the transition voltage between forward and reverse biasing mode has been analysed versus temperature. The thermal sensitivity of the drift of the threshold voltage and of the transition voltage is attributed to the kinetics of ionization and neutralization of the donor traps with the applied gate voltage. This drift of Vth, and the action of many other traps or charges, cause the drain current to vary over time. These results are finally compared to those obtained by HTRB stress (High Temperature Reverse Bias), presenting similar degradation signatures over a longer stress period.

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Section: Time Domain Characterizationsupporting

confidence: 65%

Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations

Tartarin

Lazăr

Rumeau

et al. 2020

Microelectronics Reliability

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“…Most researches have focused on the characterization of the GaN material and devices at low temperature. However, the low temperature reliability of GaN based HEMTs is lack of investigation [13].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Zhu

Hou

et al. 2020

IEEE Access

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The inverse piezoelectric effect and trap effect in GaN HEMTs under the high electric field by reverse-bias step stress at cryogenic temperature (CT, 77K) have been investigated. It is found that the inverse piezoelectric effect is suppressed while the trap effect is enhanced at CT. Due to the lower tensile stress in the as-grown AlGaN barrier at CT, the amplitude of the critical voltage related to inverse piezoelectric effect increases from 75V at 300K to 100V at CT, mitigating the irreversible degradation of the devices. The inverse piezoelectric effect dominates the degradation of reverse gate leakage, which is weakened at CT. However, the devices suffer from more degradation of I d (decreases by 94.38%) and G m,max (decreases by 95.15%) at CT in the dark, induced by the serious trap effect due to the longer emission time. UV-light-assisted stress measurements have been utilized to identify the contribution of the two mechanisms to the degradation of device characteristics at CT. The degradation of I d (G m,max) is only 0.82% (3.31%) for the piezoelectric effect and 93.56% (91.84%) for trap effect at CT, respectively. INDEX TERMS AlGaN/GaN, cryogenic temperature, reverse-bias stress, high electric field, inverse piezoelectric effect, trap, degradation.

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“…The basic theory of pulsed stress has been reported in early publications. 29,30) The decay time comparison of the two heating mode at the same heating power (temperature) are shown in Fig. 4(b).…”

Section: Applied Physics Expressmentioning

confidence: 99%

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

Sun

Zhan

Liu

et al. 2019

Appl. Phys. Express

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This paper demonstrates a method to reduce the decay time in AlGaN/GaN photodetectors by a pulsed heating mode. A suspended AlGaN/GaN heterostructure photodetector integrated with a micro-heater is fabricated and characterized under ultraviolet illumination. We have observed that the course of persistent photoconductivity was effectively accelerated by applying pulsed heating. The decay time is significantly reduced from 175 s by DC heating to 116 s by 50 Hz pulsed heating at the same power (280 mW). With the same pulse duty cycle and a 50 Hz pulsed heating frequency, a reduction of 30%-45% in decay time is measured compared to DC heating.

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Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature

Cited by 8 publications

References 30 publications

Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations

Analysis of drain current transient stability of AlGaN/GaN HEMT stressed under HTOL & HTRB, by random telegraph noise and low frequency noise characterizations

Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature

Suppression of persistent photoconductivity AlGaN/GaN heterostructure photodetectors using pulsed heating

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