Temperature gradient controlled SiC crystal growth

Anikin, M. M.; Madar, R.

doi:10.1016/s0921-5107(96)01993-9

Cited by 37 publications

(19 citation statements)

References 3 publications

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“…Many authors have already reported on the effect of the C/Si ratio on the nature of the grown polytype and on the occurrence of structural defects. [17][18][19] Moreover, this C/Si ratio has influence on the doping control through the well-known "site competition" mechanism. [20] Due to this effect, Fanton et al [21] have recently demonstrated a reduced nitrogen incorporation in sublimation-grown crystals by working under a hydrogencontaining atmosphere.…”

Section: Investigation Of the Pvt Stepmentioning

confidence: 99%

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

Chaussende

Blanquet

Baillet

et al. 2006

Chemical Vapor Deposition

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The main trends that govern the continuous-feed physical vapor transport (PVT), bulk-crystal-growth process is investigated experimentally, together with thermodynamic and computation fluid dynamics (CFD) calculations. Several chemical systems are considered. An analysis of the chemistry of every successive step (CVD, transfer, and PVT) is presented first. The effects of hydrogen and chlorine are then investigated. Then, the interaction between the different steps is discussed. The strong chemical interaction which exists between the CVD and the PVT zones is demonstrated to require the consideration of the whole process and not the two zones separately.

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Section: Investigation Of the Pvt Stepmentioning

confidence: 99%

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

Chaussende

Blanquet

Baillet

et al. 2006

Chemical Vapor Deposition

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“…In a general way the thermal field can be controlled by the heating zone geometry and coil positioning [13]. In the first sequence of growth experiments the heating zone geometry was optimised to give the best crystal growth results and maintained unchanged afterwards.…”

Section: Control Of the Thermal Field By Coil Positioningmentioning

confidence: 99%

Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient

Herro

Epelbaum

Bickermann

et al. 2004

Journal of Crystal Growth

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“…The importance of a wellenough prepared surface is one of the first requirements for epitaxial growth with good structural quality. For example, in order to avoid generation of defects at the seed-crystal interface, various in-situ surface preparation techniques have been developed for seeded sublimation growth [22,23]. High-quality surface preparation techniques have also been developed in SiC-CVD [7,24] and similar techniques may eventually be used in HTCVD.…”

Section: Micropipe Formationmentioning

confidence: 99%