Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient

Herro, Ziad; Epelbaum, Boris M.; Bickermann, Matthias; Masri, P.; Winnacker, A.

doi:10.1016/j.jcrysgro.2003.10.060

Cited by 35 publications

(38 citation statements)

References 12 publications

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“…Besides, changing the position of the highest temperature relative to growth interface has a great effect on the radial temperature gradient. It has been reported in the literature [23] that the nearer growth interface the position of highest temperature is, the larger the radial temperature gradient, which is thought to be involved in the MDs' formation. It has been reported in Ref.…”

Section: Resultsmentioning

confidence: 99%

“…Here T 3 is the highest temperature, T 2 is larger than T 1 , and T 0 is the lowest temperature in the whole growth chamber. The advantage of such designed temperature field is to enlarge the single crystal region [23]. However, such designed temperature field also result in the non-uniform temperature distribution at the growth front interface of crystal, colder at the center and hotter at the periphery, leading to larger growth rate at the centre than that at the periphery.…”

Section: Resultsmentioning

confidence: 99%

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Factors affecting the formation of misoriented domains in 6H‐SiC single crystals grown by PVT method

Peng¹,

Yang²,

Jian³

et al. 2009

Cryst. Res. Technol.

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Misoriented domains (MDs) are common defects in 6H-SiC single crystals. We performed an experimental study on the formation of MDs in 2-inch 6H-SiC single crystals. Micro-Raman spectroscopy revealed that the polytype of MDs was mainly 4H-SiC. By changing growth conditions, it was found that the MDs' formation was closely related to growth rate and the position of highest temperature relative to growth interface. When the growth rate of ingots was relatively high the MDs were more likely to form. Furthermore, the nearer growth interface the position of highest temperature was, the larger the size of the MDs. Based on our experimental findings we suggested that the MDs' formation and the polytype switching from 6H-to 4H-SiC were due to too large axial and/or radial temperature gradients.The results would be helpful to improve the quality of SiC single crystals grown by PVT technique.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Factors affecting the formation of misoriented domains in 6H‐SiC single crystals grown by PVT method

Peng¹,

Yang²,

Jian³

et al. 2009

Cryst. Res. Technol.

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“…In PVT of silicon carbide along the [0001] direction layered growth mode dominates strongly the growth process and the crystal tends to develop (0001) facets. Facet size depends on the position of the facet in respect to the isothermal lines [5].…”

Section: Resultsmentioning

confidence: 99%

“…The reference seed temperature was set to 2200°C in all growth runs. More details on the operation of the growth reactor are given in [5]. Si-face 6H-SiC wafers 35-40 mm in diameter, have been used as seed crystals.…”

Section: Methodsmentioning

confidence: 99%

“…In the middle area a flat facet is present, whereas a macroscopically smooth non-faceted area is observed in the outer part. The convexity of the non-faceted surface varies markedly depending on growth conditions (for detail see [5]). The single-crystalline part is surrounded by a polycrystalline rim, which originates from spontaneous (parasitic) nucleation on crucible walls.…”

Section: Methodsmentioning

confidence: 99%

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Investigation of lattice plane bending in large (0001)SiC crystals using high‐energy X‐ray technique

Epelbaum

Herro

Bickermann

et al. 2005

phys. stat. sol. (c)

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Bulk SiC crystals have been investigated using high-energy X-ray technique. The penetration depth of the high-energy X-rays was enough to perform the mapping of the whole crystal bulk in order to analyze the distribution of subgrain boundaries (SGB) and bending of the lattice planes. The full width at half maximum (FWHM) of the rocking curves reflects the structural quality of bulk SiC and correlates to the SGB density. The shift of θ Bragg when moving the sample in reference to the incident beam reflects the inclination of the lattice planes. A model, which emphasizes the effect of growth interface morphology on SGB density and lattice bending, is presented. The effect of radial temperature gradient on crystal quality is demonstrated presenting a way to reduce structural defects.

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Dislocation Formation During Physical Vapor Transport Growth of 4 H‐SiC Crystals

Ohtani¹

2021

Wide Bandgap Semiconductors for Power Electronics

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Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient

Cited by 35 publications

References 12 publications

Factors affecting the formation of misoriented domains in 6H‐SiC single crystals grown by PVT method

Factors affecting the formation of misoriented domains in 6H‐SiC single crystals grown by PVT method

Investigation of lattice plane bending in large (0001)SiC crystals using high‐energy X‐ray technique

Dislocation Formation During Physical Vapor Transport Growth of 4 H‐SiC Crystals

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