High temperature CVD growth of SiC

Ellison, A.; Zhang, J.; Peterson, Jeffrey M.; Henry, Anne; Wahab, Q.; Bergman, J. P.; Makarov, Yu.N.; Vorob’ev, A.N.; Vehanen, A.; Janzén, Erik

doi:10.1016/s0921-5107(98)00482-6

Cited by 84 publications

(70 citation statements)

References 23 publications

(30 reference statements)

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“…Generally, both bulk and epitaxial growth are highly dependent on the surface quality of the starting material [4]. The substrate surface damages can affect the epilayer quality by introducing several different kinds of extended defects [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Hassan

Bergman

Henry

et al. 2008

Journal of Crystal Growth

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A study of the in-situ surface preparation has been performed for both Si-and C-face 4H-SiC nominally on-axis samples. The surface was studied after etching under C-rich, Si-rich and under pure hydrogen ambient conditions at the same temperature, pressure and time interval using a hot-wall chemical vapor deposition reactor. The surfaces of all the samples were analyzed using optical microscopy with Normarski diffractional interference contrast and atomic force microscopy with tapping mode before and after in-situ etching. Polishing related damages were found to be removed under all etching conditions, also the surface step structure was uncovered and a few defect-selective etch pits were observed. For the Si-face sample, the best surface morphology was obtained after Si-rich etching conditions with more uniform and small macro-step height which resulted in the lowest surface roughness. For the C-face sample the surface morphology was comparable under all etching conditions and not much difference was found except for the etching rate. Si droplets were not observed under any etching conditions.

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Section: Introductionmentioning

confidence: 99%

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Hassan

Bergman

Henry

et al. 2008

Journal of Crystal Growth

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“…Cree Research Inc., which was founded in 1987, first commercialized the single crystalline SiC wafer grown by improved PVT process, which is suitable for the semiconductor industry [10]. In the late 1990s, wafers with higher purity produced by the hightemperature chemical vapor deposition (HTCVD) method are available on the market [11,12]. Nowadays, high-quality SiC wafers with diameter size up to 150 mm could be purchased [13].…”

Section: Part I: Introduction 1 Silicon Carbidementioning

confidence: 99%

CVD solutions for new directions in SiC and GaN epitaxy

Li¹

2015

Linköping Studies in Science and Technology. Dissertations

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This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properties over other common SiC polytypes, such as high hole/electron mobility and low interface trap density with oxide. Due to lack of commercial native substrates, 3C-SiC is mainly grown on the cheap silicon (Si) substrates. However, there’s a large mismatch in both lattice constants and thermal expansion coefficients leading to a high density of defects in the epitaxial layers. In paper 1, the new CVD solution for growing high quality double-position-boundaries free 3C-SiC using on-axis 4H-SiC substrates is presented. Reproducible growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H2 ratio, N2 addition and pressure, are covered in this study. GaN is another attractive wide band gap semiconductor for power devices and optoelectronic applications. In the GaN-based transistors, carbon is often exploited to dope the buffer layer to be semi-insulating in order to isolate the device active region from the substrate. The conventional way is to use the carbon atoms on the gallium precursor and control the incorporation by tuning the process parameters, e.g. temperature, pressure. However, there’s a risk of obtaining bad morphology and thickness uniformity if the CVD process is not operated in an optimal condition. In addition, carbon source from the graphite insulation and improper coated graphite susceptor may also contribute to the doping in a CVD reactor, which is very difficult to be controlled in a reproducible way. Therefore, in paper 2, intentional carbon doping of (0001) GaN using six hydrocarbon precursors, i.e. methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10) and trimethylamine (N(CH3)3), have been explored. In paper 3, propane is chosen for carbon doping when growing the high electron mobility transistor (HEMT) structure on a quarter of 3-inch 4H-SiC wafer. The quality of epitaxial layer and fabricated devices is evaluated. In paper 4, the behaviour of carbon doping using carbon atoms from the gallium precursor, trimethylgallium (Ga(CH3)3), is explained by thermochemical and quantum chemical modelling and compared with the experimental results. GaN is commonly grown on foreign substrates, such as sapphire (Al2O3), Si and SiC, resulting in high stress and high threading dislocation densities. Hence, bulk GaN substrates are preferred for epitaxy. In paper 5, the morphological, structural and luminescence properties of GaN epitaxial layers grown on N-face free-standing GaN substrates are studied since the N-face GaN has advantageous characteristics compared to the Ga...

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“…Various types of vertical reactors have also been introduced; in a barrel or chimney type both the gas flow and substrates are oriented vertically. [16,17] . In Section 3, we will…”

Section: Introductionmentioning

confidence: 99%

Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

Henry

Ul-Hassan

Bergman

et al. 2006

Chemical Vapor Deposition

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The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is described for two types (horizontal and vertical) of hot-wall (HW) CVD reactors. In both cases, the advantages of HWCVD are the better cracking efficiency of the precursor gases and better temperature distribution together with low input power. Characterizations of some examples of thick SiC layers grown are given.

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High temperature CVD growth of SiC

Cited by 84 publications

References 23 publications

In-situ surface preparation of nominally on-axis 4H-SiC substrates

In-situ surface preparation of nominally on-axis 4H-SiC substrates

CVD solutions for new directions in SiC and GaN epitaxy

Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

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