Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating

Bachmann, Tobias; Alexeev, Arseny; Koelmans, Wabe W.; Zipoli, Federico; Ott, A. K.; Dou, Chunmeng; Ferrari, Andrea C.; Nagareddy, V. Karthik; Craciun, Monica F.; Jonnalagadda, Vara Prasad; Curioni, A.; Sebastian, Abu; Eleftheriou, Evangelos; Wright, C. David

doi:10.1109/tnano.2017.2674303

Cited by 15 publications

(9 citation statements)

References 27 publications

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“…Undoubtedly, to design a practicable device, the values of these characteristic parameters are pertinent to the inherent properties of materials which suggest that a thicker DLC layer usually exhibits a higher electrical conductivity [ 17 ]. Additionally, recent literature has reported that the electrical conductivity of a 5 nm DLC capping layer, when subjected to Joule heating, can sharply increase to 140 Ω −1 ·m −1 [ 18 , 19 ]; in contrast, a DLC capping layer with an electrical conductivity of 140 Ω −1 ·m −1 and a thickness of 5 nm appears to be a satisfying configuration that can simultaneously meet the temperature requirements for amorphization as well as the practicable measurements.…”

Section: Resultsmentioning

confidence: 99%

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Wang¹,

Yang²,

Wen³

et al. 2018

Nanomaterials

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Electrical probe memory using Ge2Sb2Te5 media has been considered a promising candidate in the future archival storage market due to its potential for ultra-high density and long data retention time. However, most current research efforts have been devoted to the writing of crystalline bits using electrical probe memory while ignoring the viability of writing amorphous bits. Therefore, this paper proposes a physical, realistic, full three-dimensional model to optimize the practicable media stack by spatially and temporally calculating temperature distributions inside the active media during the writing of amorphous bits. It demonstrates the feasibility of using an optimized device that follows a Silicon/Titanium Nitride/Ge2Sb2Te5/Diamond-Like Carbon design with appropriate electro-thermal properties and thickness to achieve ultra-high density, low energy consumption, and a high data rate without inducing excessive temperature. The ability to realize multi-bit recording and rewritability using the designed device is also proven, making it attractive and suitable for practicable applications.

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Section: Resultsmentioning

confidence: 99%

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Wang¹,

Yang²,

Wen³

et al. 2018

Nanomaterials

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“…In spite of this, DLC film was also reported to exhibit threshold switching characteristic due to a conjugated network of sp 2 -bonded carbon cluster that forms a conductive filament connecting top electrode with bottom electrode [56]. As indicated in previous literatures, a 5 nm thick tetrahedral amorphous carbon (i.e., one typical type of DLC) film when subjected to a voltage of 3 V results in an electrical conductivity of 100 −1 m −1 [57]. As a result, it is reasonable to speculate that the electrical conductivity of a 2 nm thick DLC film may reach 100 −1 m −1 during the write process of phasechange electrical probe memory.…”

Section: Recent Progress On Probe Memoriesmentioning

confidence: 92%

Recent Progress on Probe-Based Storage Devices

Liu

Wang

2019

IEEE Access

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Prosperity of information technology triggers a tremendous amount of digital data that needs to be stored by storage memories with ultra-high capacity. Although probe-based memory has exhibited its superb storage merits, its developments to date, however, remain slow due to several physical limits. In order to overcome its drawbacks, and to further advance probe storage technologies, a comprehensive review regarding the current status and future prospect of probe-based memories become of importance. In this paper, we first presented the physical principles of various reported probe-based memories and their respective advantages/disadvantages, as well as their current status. Subsequently, up-to-date progress made on these probe memories and some novel probe memories concepts is proposed. The prospect of a probebased memory device is finally predicted.INDEX TERMS Phase-change materials, probe, capping, transmission.

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“…An exciting fact is that the resistance of CarReM can be reversibly and rapidly switched between HRS and LRS when suffering from electrical excitations. Such RS phenonmeon associated with its attractive mechanical/chemical properties, endows CarReM with multiple merits including fast write speed, long data retention, great endurance cycles, and compatibility with silicon (Si) based circuits [15], [16]. Nevertheless, the possibilty of replacing current mainstream storage devices (e.g., NAND Flash) with CarReM can not be envisaged in the near future.…”

Section: Introductionmentioning

confidence: 99%

Modeling Electrical Switching Behavior of Carbon Resistive Memory

Wang

Xiong

2020

IEEE Access

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The amorphous carbon-based resistive memory has recently attained vast attention due to its non-volatility, fast switching speed, long data retention, and multilevel recording. However, the memory switching mechanism of amorphous carbon media remains mysterious and thus severely restricted its application prospect. To resolve this issue, a comprehensive three-dimensional model by simultaneously solving the current continuity equation, heat transfer equation, and mass concentration equation, is developed to model the physical conversions between sp 2 and sp 3 clusters. According to simulations, electric field was considered as the sole critical factor that determines the formation of conductive sp 2 filament during the 'SET' process, whereas the 'RESET' process is mainly attributed to the induced high temperature that accelerates the growth of sp 3 cluster and causes the rupture of the sp 2 filament. It was additionally found that the sp 2 filament was preferably formed inside the region having larger sp 2 concentrations, and its rupture usually initiates from the filament center. The threshold voltages of carbon resistive memory for different thickness and different sp 2 fractions were also calculated and exhibited good agreement with experimental measurements. INDEX TERMS Amorphous carbon, filament, sp 2 clusters, switching.

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Temperature Evolution in Nanoscale Carbon-Based Memory Devices Due to Local Joule Heating

Cited by 15 publications

References 27 publications

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Recent Progress on Probe-Based Storage Devices

Modeling Electrical Switching Behavior of Carbon Resistive Memory

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