Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors

Xiao, Yongguang; Tang, Minghua; Li, J. C.; Cheng, Chien-Min; Jiang, Bo; Cai, H. Q.; Tang, Zihui; Lv, Xiaosong; Gu, Xiaochen

doi:10.1063/1.3688046

Cited by 37 publications

(13 citation statements)

References 16 publications

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“…Because internal voltage (V int ) can be calculated as the voltage difference between V G and V fe , the I ds value of NCFET can be numerically simulated from the baseline MOSFET [11]. Since SS generally degrades (i.e., the value of SS increases) with increasing temperature, it can be forecasted that SS will increase at temperatures above 300 K [13], [14]. In [15] (which fabricated the MFIS structured hysteresisfree NCFET using Al:HfO 2 ), the body factor (m) was extracted from measured SS of NCFET: m = 0.96.…”

Section: Figure 1 the Circuit Schematic Of 6-t Sram Bit-cell Pu Andmentioning

confidence: 99%

NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

Hong

Choi

Shin

2020

IEEE J. Electron Devices Soc.

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The key feature of NCFET (negative capacitance field effect transistor) is its sub-threshold slope (SS) < 60 mV/decade at 300 K. In this work, the n-type NCFET (i.e., pull-down (PD) and passgate (PG) transistor in six-transistor (6T) SRAM bit-cell) has SS of 53.92 mV/decade, and the p-type NCFET (i.e., pull-up (PU) transistor in the 6T SRAM bit-cell) has SS of 58.96 mV/decade. In the NCFET-based SRAM cell (vs. conventional SRAM cell with conventional planar bulk MOSFETs), its read (hold)-stability and write-ability are evaluated by the metric of read static noise margin (SNM) and write-ability current (I w), respectively. Then, under process-induced random variation, sensitivities of SNM and I w are extracted. Finally, the yield of NCFET-based SRAM array (vs. conventional SRAM array) is quantitatively estimated using the cell-sigma.

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Section: Figure 1 the Circuit Schematic Of 6-t Sram Bit-cell Pu Andmentioning

confidence: 99%

NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

Hong

Choi

Shin

2020

IEEE J. Electron Devices Soc.

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“…The insulating property of the DE layer was considered important in limiting the inflow of the compensating charges towards the FE/DE interface during the observation of the NC effect . NC‐field effect transistor (NC‐FET) is an another intensively studied application that exploits the NC effect, where the semiconductor layer can be considered equivalent to the DE layer in the FE/DE bilayer . In this application, the internal field exerted by the spontaneous polarization can amplify the gate voltage (voltage amplification effect), thereby achieving the subthreshold swing lower than the Boltzmann limit (60 mV per decade at room temperature).…”

Section: Introductionmentioning

confidence: 99%

Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al₂O₃/Hf_0.3Zr_0.7O₂ Bilayer Thin Film

Kim

Park

et al. 2019

Adv Funct Materials

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The negative capacitance (NC) effect is now attracting a great deal of attention in work towards low-power operation of field effect transistors and extremely large capacitance density in dynamic random access memory. However, to date, observation of the NC effect in dielectric/ferroelectric bilayer capacitors has been limited to the use of epitaxial ferroelectric thin films based on perovskite crystal structures, such as Pb(Zr,Ti)O 3 and BaTiO 3 , which is not compatible with current complementary metal oxide semiconductor technology. This work, therefore, reports on the transient NC effect in amorphous-Al 2 O 3 /polycrystalline-Hf 0.3 Zr 0.7 O 2 bilayer systems prepared using atomic layer deposition. The thin film processing conditions are carefully tuned to achieve the appropriate ferroelectric performances that are a prerequisite for the examination of the transient NC effect. Capacitance enhancement is observed in a wide voltage range in 5-10 nm thick Al 2 O 3 /Hf 0.3 Zr 0.7 O 2 bilayer thin films. It is found that the capacitance of the dielectric layer plays a critical role in the determination of additional charge density induced by the NC effect. In addition, inhibition of the leakage current is important for stabilization of nonhysteretic charge-discharge behavior of the bilayers. The mean-field approximation combined with classical Landau formalism precisely reproduces the experimental results.

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“…Thus, details of polarization charge in its spatial and temporal evolution can be used to understand the underlying physics of NC. To date, extensive simulation has been used to study the NC effects and NC-FETs [17][18][19][20][21]. For example, the distribution of FE polarization along the gate length due to the non-uniform electric field along the channel in NC-FET is studied by considering the domain interaction along the channel direction [19].…”

Section: Introductionmentioning

confidence: 99%

Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation

Chang

Liu

2021

Sci. China Inf. Sci.

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Polarization evolution with space and time in HfO 2 based metal-ferroelectric-insulator-metal (MFIM) structure is studied based on the phase field model by self-consistently solving the two-dimensional time-dependent Ginzburg-Landau and Poisson equations. Through examining the domain wall and electrostatic (depolarization) energies compared with the negative ferroelectric (FE) anisotropy energy, the correlation between the domain pattern (phase transition) and negative capacitance (NC) effect is revealed for different structure parameters and material properties, including FE thickness and gradient coefficient, dielectric permittivity and thickness, and operation frequency of applied voltage. The design space for stabilized NC with (near) hysteresis-free operation accompanied with voltage amplification is limited by phase transition, implying the potentials and limitations of FE HfO 2 for energy-efficient steep-slope devices.

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Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors

Cited by 37 publications

References 16 publications

NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al₂O₃/Hf_0.3Zr_0.7O₂ Bilayer Thin Film

Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation

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Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors

Cited by 37 publications

References 16 publications

NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

NCFET-Based 6-T SRAM: Yield Estimation Based on Variation-Aware Sensitivity

Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al2O3/Hf0.3Zr0.7O2 Bilayer Thin Film

Design space for stabilized negative capacitance in HfO2 ferroelectric-dielectric stacks based on phase field simulation

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Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al₂O₃/Hf_0.3Zr_0.7O₂ Bilayer Thin Film