The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of I ON. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs. V
The electrical properties of negative capacitance (NC) ferroelectric field-effect transistors (FeFETs) were theoretically investigated in the temperature range from 280 to 360 K. The derived results indicate that for a fixed thickness of ferroelectric thin film the amplification of surface potential can be tuned by temperature. The transfer and output characteristics degrade with increasing temperature due to the gradual loss of ferroelectric NC effect. It is expected that the derived results may provide some insight into the design and performance improvement for the low power dissipation applications of FeFETs.
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