Temperature-Dependent Two-Dimensional Transition Metal Dichalcogenide Heterostructures: Controlled Synthesis and Their Properties

Abstract

Vertically stacked and laterally stitched heterostructures consisting of two-dimensional (2D) transition metal dichalcogenides (TMDCs) are predicted to possess novel electronic and optical properties, which offer opportunities for the development of next-generation electronic and optoelectronic devices. In the present work, we report the temperature-dependent synthesis of 2D TMDC heterostructures on Si/SiO substrates, including MoS-WS, WS-MoS-WS, MoWS-WS, and MoWS alloyed bilayer heterostructures by ambient pressure chemical vapor deposition (CVD). Raman and photoluminescence mapping studies demonstrate that the as-produced heterostructures show distinct structural and optical modulation. Our results indicate that the evolution of various 2D heterostructures originates from the competition between the adsorption and desorption of Mo atoms and the diffusion of W atoms under various growth temperatures. This work sheds light on the design and fabrication of heterostructures using controllable interfaces and junctions of diverse TMDC atomic layers.

Two-dimensional WS2/MoS2 heterostructures: properties and applications

“…32, the resulting MoS 2 triangle, vertical MoS 2 /WS 2 heterostructures, lateral WS 2 /MoS 2 /WS 2 heterostructures, vertical WS 2 /Mo 1−x W x S 2 heterostructures, and lateral W x S 2 /Mo 1−x heterostructures are able to be obtained sequentially with the growth temperatures increasing from 750 °C to 870 °C. 150 Temperature dependence is not only related to the preparation of heterostructures but also affects the properties of bilayer WS 2 /MoS 2 heterostructures, which have been prepared. The results of both temperature-dependent Raman and PL spectra of the vdW bilayer WS 2 /MoS 2 heterostructures show that the A 1g and E 1 2g modes of WS 2 and MoS 2 have a noticeable linear relationship as the temperature increases from 300 to 642 K. 151 Fig.…”

Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity

“…Chemical vapor deposition (CVD) is considered to be the most promising method for directly synthesizing high-quality and large-scale 2D materials. − Unfortunately, as far as we know, there are few reports about synthesizing 2D ultrathin GeSe by the CVD method. This difficulty emerges probably due to the strong interlaminar forces and the existence of multiple crystalline structures of GeSe .…”

Low Deposition Temperature-Induced Changes of the Microstructure and Tribological Property of WS2 Film

“…The effect of the substrate temperature, another influence factor for the growth of the film, has long been investigated. However, previous research mainly focused on the effect of substrate temperature higher than room temperature on the microstructure and the friction coefficient of the TMD film [7,[27][28][29][30]. The TMD film deposition at cryogenic temperature was rarely investigated.…”