Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity

Hu, Xiaozong; Huang, Pu; Liu, Kailang; Jin, Bao; Zhang, Xun; Zhang, Xiuwen; Zhou, Xing; Zhai, Tianyou

doi:10.1021/acsami.9b06425

Cited by 46 publications

(59 citation statements)

References 53 publications

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“…Similar shifts were observed in many 2D materials, including graphene, MoS 2 , and GaSe. [166][167][168][169] Moreover, the synthesized GeSe flakes are highly uniform and homogeneous, which is reflected in respective Raman mapping of B 3g mode (Figure 10k). In addition, a sequence of polarizationresolved Raman spectra for A g and B 3g modes has been recorded, showing that the angular dependence on crystallographic directions of the NSs is identical to that of mechanically exfoliated GeSe flakes.…”

Section: Bottom-up Methods Via Vapor Phase Depositionmentioning

confidence: 99%

Section: Bottom-up Methods Via Vapor Phase Depositionmentioning

confidence: 99%

“…Furthermore, Hu et al. [ 166 ] have reported a high quality single‐crystalline ultrathin layer of 2D GeSe flakes, which are synthesized by a salt‐assisted CVD method (Figure 10g,h). In this process, mixed GeSe 2 and KCl powder was heated to 550 °C for 0.5 h. During the heating process a mixed gas of H 2 and Ar was passed through the quartz tube used in the process.…”

Section: Methods For Mmcs Preparation and Characterizationsmentioning

confidence: 99%

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Recent Advances in 2D Metal Monochalcogenides

Sarkar

Stratakis

2020

Advanced Science

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The family of emerging low‐symmetry and structural in‐plane anisotropic two‐dimensional (2D) materials has been expanding rapidly in recent years. As an important emerging anisotropic 2D material, the black phosphorene analog group IV A –VI metal monochalcogenides (MMCs) have been surged recently due to their distinctive crystalline symmetries, exotic in‐plane anisotropic electronic and optical response, earth abundance, and environmentally friendly characteristics. In this article, the recent research advancements in the field of anisotropic 2D MMCs are reviewed. At first, the unique wavy crystal structures together with the optical and electronic properties of such materials are discussed. The Review continues with the various methods adopted for the synthesis of layered MMCs including micromechanical and liquid phase exfoliation as well as physical vapor deposition. The last part of the article focuses on the application of the structural anisotropic response of 2D MMCs in field effect transistors, photovoltaic cells nonlinear optics, and valleytronic devices. Besides presenting the significant research in the field of this emerging class of 2D materials, this Review also delineates the existing limitations and discusses emerging possibilities and future prospects.

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Section: Bottom-up Methods Via Vapor Phase Depositionmentioning

confidence: 99%

Section: Bottom-up Methods Via Vapor Phase Depositionmentioning

confidence: 99%

Section: Methods For Mmcs Preparation and Characterizationsmentioning

confidence: 99%

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Recent Advances in 2D Metal Monochalcogenides

Sarkar

Stratakis

2020

Advanced Science

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“…Similar to the puckered layer structure of BP, the group IV-VI compounds (GeS [30], GeSe [31,32], SnS [33], and SnSe [34]) have shown great application possibilities in photodetectors, photovoltaic, piezoelectric, and thermoelectric devices, due to their earth abundance, environmental compatibility, less toxicity, and anisotropic properties [35][36][37]. Among these 2D-layered monochalcogenides, the monolayer GeS has the largest ratio (3.38) of lattice thermal conductivities along zigzag and armchair directions at 300 K [37].…”

Section: Introductionmentioning

confidence: 94%

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

et al. 2020

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Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (E g~1 .6 eV, E 1~2 .1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reversesaturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the "ON" and "OFF" states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm −2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

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“…[ 187 ] Unexpectedly, although α‐GeS nanosheets have been commonly prepared by vapor deposition (e.g., CVD and PVD), [ 188 ] it was the last method applied to prepare α‐GeSe nanosheets. [ 184,189 ] The as‐prepared GeSe nanosheets had a rectangular shape because of the [010] growth direction. The phototransistors based on these nanosheets presented remarkable optoelectronic properties.…”

Section: Group Iv–vimentioning

confidence: 99%

2D Materials Based on Main Group Element Compounds: Phases, Synthesis, Characterization, and Applications

Neupane

Jia

et al. 2020

Adv Funct Materials

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2D materials based on main group element compounds have recently attracted significant attention because of their rich stoichiometric ratios and structure motifs. This review focuses on the phases in various 2D binary materials including III-VI, IV-VI, V-VI, III-V, IV-V, and V-V materials. Reducing 3D materials to 2D introduces confinement and surface effects as well as stabilizes unstable 3D phases in their 2D form. Their crystal structures, stability, preparation, and applications are summarized based on theoretical predictions and experimental explorations. Moreover, various properties of 2D materials, such as ferroelectric effect, anisotropic optical and electrical properties, ultralow thermal conductivity, and topological state are discussed. Finally, a few perspectives and an outlook are given to inspire readers toward exploring 2D materials with new phases and properties.

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Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity

Cited by 46 publications

References 53 publications

Recent Advances in 2D Metal Monochalcogenides

Recent Advances in 2D Metal Monochalcogenides

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

2D Materials Based on Main Group Element Compounds: Phases, Synthesis, Characterization, and Applications

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