Recent Advances in 2D Metal Monochalcogenides

Sarkar, Abdus Salam; Stratakis, Emmanuel

doi:10.1002/advs.202001655

Cited by 77 publications

(67 citation statements)

References 261 publications

(526 reference statements)

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“…Particularly, SiP has another different orthorhombic structure, about which experimental research has investigated the in-plane anisotropic properties. [105] Much concern was aroused about the group IV monochalcogenides [106][107][108] including SnS, [57] SnSe, [109][110][111] GeS, [90] and GeSe [55] because of their similar puckered orthorhombic lattice as BP (Figure 2e,f). More reasonably, binary means that two elements with different electronegativity exist inducing the broken inversion symmetry, and hence, this sort of materials may have higher anisotropy.…”

Section: Type Abmentioning

confidence: 99%

Anisotropic Low‐Dimensional Materials for Polarization‐Sensitive Photodetectors: From Materials to Devices

Wang

Jiang

et al. 2022

Advanced Optical Materials

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of polarization states: i) Natural light, the vibrational plane of which is not fixed. The electric vectors of natural light are axisymmetric, evenly distributed in all directions and synchronously vibrating. ii) Complete polarized light can be subdivided into linearly polarized light, elliptically polarized light, and circularly polarized light. Linearly polarized light has a fixed vibrational plane. The vibrational track of its electric vector is a straight line during propagation. Elliptically polarized light, similarly, the terminal trajectory that the electric vector vibrates is an ellipse. The plane of the ellipse is perpendicular to the propagative direction of light. And the electric vector rotates constantly, the magnitude and direction of which change regularly with time. When facing the direction light propagates, if the end of the electric vector travels counterclockwise, it is a right-handed circular polarization state; if clockwise, it is a left-handed circular polarization state. Circularly polarized light is a special case of elliptically polarized light. iii) Partially polarized light, the vibration of the electric vector has a comparative advantage in a certain direction. Simply, it is the superposition of natural light and complete polarized light. Because of that common characteristic of light, the polarization state of light provides a new degree of freedom in detection and application. [18,19] Early studies of the polarization-sensitive photodetectors mainly focus on the macroscopic anisotropy, which requires complex technologies for the patterning and aligning process. [20][21][22] Anisotropic low-dimensional materials have low-symmetry crystal structures including orthorhombic, monoclinic, and triclinic so that they have intrinsic anisotropic properties [23][24][25] obtaining highly polarization sensitivity for photodetectors. [26,27] Fortunately, low-dimensional materials are emerging due to their large families, [28][29][30][31][32] fascinating photo electric characteristics, [28,[32][33][34] and naturally microscopic anisotropy among most of them. [23] From early on, the pioneering work has been done on BP-based polarization-sensitive photodetectors, which advance the development of anisotropic systems in this application. [35] According to the diversified evolution of element types, apart from black phosphorus, [36][37][38][39][40] some monoelemental 2D materials with anisotropy like black arsenic, [41,42] antimonene, [43,44] borophene, [45,46] and tellurene [47,48] have been discovered and studied. Meanwhile, a mass of anisotropic binaries have sprung up typically including

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Section: Type Abmentioning

confidence: 99%

Anisotropic Low‐Dimensional Materials for Polarization‐Sensitive Photodetectors: From Materials to Devices

Wang

Jiang

et al. 2022

Advanced Optical Materials

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“…Two-dimensional (2D) layered monochalcogenides like SnS exhibit a puckered lattice structure with reduced crystal symmetry (orthorhombic) [6] and display structural resemblance to the classical 2D van der Waals material graphene and most of the transition metal dichalcogenides (TMDCs) [7,8]. Their layer-dependent tunable bandgap, high carrier mobility, and strong in-plane anisotropy make these materials promising for emerging next-generation electronic [9] and photonic applications [10,11]. SnS has been actively studied due to its p-type semiconductor characteristics and remarkable optoelectronic properties [12] due to the reported direct bandgap of about 1.3 and indirect bandgap of about 1.0 eV [13].…”

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confidence: 99%

Vapor Phase Synthesis of SnS Facilitated by Ligand-Driven “Launch Vehicle” Effect in Tin Precursors

et al. 2021

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Extraordinary low-temperature vapor-phase synthesis of SnS thin films from single molecular precursors is attractive over conventional high-temperature solid-state methods. Molecular-level processing of functional materials is accompanied by several intrinsic advantages such as precise control over stoichiometry, phase selective synthesis, and uniform substrate coverage. We report here on the synthesis of a new heteroleptic molecular precursor containing (i) a thiolate ligand forming a direct Sn-S bond, and (ii) a chelating O^N^N-donor ligand introducing a “launch vehicle”-effect into the synthesized compound, thus remarkably increasing its volatility. The newly synthesized tin compound [Sn(SBut)(tfb-dmeda)] 1 was characterized by single-crystal X-ray diffraction analysis that verified the desired Sn:S ratio in the molecule, which was demonstrated in the direct conversion of the molecular complex into SnS thin films. The multi-nuclei (1H, 13C, 19F, and 119Sn) and variable-temperature 1D and 2D NMR studies indicate retention of the overall solid-state structure of 1 in the solution and suggest the presence of a dynamic conformational equilibrium. The fragmentation behavior of 1 was analyzed by mass spectrometry and compared with those of homoleptic tin tertiary butyl thiolates [Sn(SBut)2] and [Sn(SBut)4]. The precursor 1 was then used to deposit SnS thin films on different substrates (FTO, Mo-coated soda-lime glass) by CVD and film growth rates at different temperatures (300–450 °C) and times (15–60 min), film thickness, crystalline quality, and surface morphology were investigated.

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as phosphorene analogues, [1][2][3][4] since they share similar puckered or wavy lattice structures with phosphorene, a 2D format of black phosphorus. [5,6] The inplane structural anisotropy of MXs, with puckered structure along the AC direction, [3] is the origin of in-plane anisotropic physical properties.

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confidence: 99%

“…[5,6] The inplane structural anisotropy of MXs, with puckered structure along the AC direction, [3] is the origin of in-plane anisotropic physical properties. [1][2][3]7,8] A plethora of properties have been reported to exhibit in-plane anisotropic response, including carrier mobility, [7] optical absorption, reflection, extinction, refraction, [8] and Raman spectral behavior. [1] The in-plane anisotropic response is exhibited along the distinguished in-plane AC and ZZ crystallographic directions, offering an additional degree of freedom in manipulating their properties.…”

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confidence: 99%

“…[1][2][3]7,8] A plethora of properties have been reported to exhibit in-plane anisotropic response, including carrier mobility, [7] optical absorption, reflection, extinction, refraction, [8] and Raman spectral behavior. [1] The in-plane anisotropic response is exhibited along the distinguished in-plane AC and ZZ crystallographic directions, offering an additional degree of freedom in manipulating their properties. [1][2][3]7,8] For example, polarization-sensitive photodetectors have been presented based on the intrinsic linear dichroism of GeSe, [8] and black phosphorus.…”

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Nonlinear Optical Imaging of In‐Plane Anisotropy in Two‐Dimensional SnS

Maragkakis

Psilodimitrakopoulos

Mouchliadis

et al. 2022

Advanced Optical Materials

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Two‐dimensional (2D) tin(II) sulfide (SnS) crystals belong to a class of orthorhombic semiconducting materials with remarkable properties, such as in‐plane anisotropic optical and electronic response, and multiferroic nature. The 2D SnS crystals exhibit anisotropic response along the in‐plane armchair (AC) and zigzag (ZZ) crystallographic directions, offering an additional degree of freedom in manipulating their behavior. Here, advantage of the lack of inversion symmetry of the 2D SnS crystal, that produces second harmonic generation (SHG), is taken to perform polarization‐resolved SHG (P‐SHG) nonlinear imaging of the in‐plane anisotropy. The P‐SHG experimental data are fitted with a nonlinear optics model, allowing to calculate the AC/ZZ orientation from every point of the 2D crystal and to map with high resolution the AC/ZZ direction of several 2D SnS flakes belonging in the same field of view. It is found that the P‐SHG intensity polar patterns are associated with the crystallographic axes of the flakes and with the relative strength of the second‐order nonlinear susceptibility tensor in different directions. Therefore, the method provides quantitative information of the optical in‐plane anisotropy of orthorhombic 2D crystals, offering great promise for performance characterization during device operation in the emerging optoelectronic applications of such crystals.

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Recent Advances in 2D Metal Monochalcogenides

Cited by 77 publications

References 261 publications

Anisotropic Low‐Dimensional Materials for Polarization‐Sensitive Photodetectors: From Materials to Devices

Anisotropic Low‐Dimensional Materials for Polarization‐Sensitive Photodetectors: From Materials to Devices

Vapor Phase Synthesis of SnS Facilitated by Ligand-Driven “Launch Vehicle” Effect in Tin Precursors

Nonlinear Optical Imaging of In‐Plane Anisotropy in Two‐Dimensional SnS

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