2021
DOI: 10.1039/d1nr00455g
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Two-dimensional WS2/MoS2 heterostructures: properties and applications

Abstract: The successful fabrications of WS2/MoS2 heterostructures provide more sufficient possibilities for optoelectronic and thermoelectric applications than graphene, because of their direct bandgap characteristics; therefore, scientific investigation on WS2/MoS2 heterostructures becomes...

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Cited by 86 publications
(45 citation statements)
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References 206 publications
(206 reference statements)
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“…32 The heterostructures have drawn attention due to their interesting electric and transport properties aer the successful synthesis by different research groups. [33][34][35][36] These systems are widely used in potential applications including sensing toxic gases due to the high sensitivity and chemical reactivity. [37][38][39] Recently, in 2019, Souza et al investigated the gas sensing properties of graphene/h-BN heterostructure for NO, NO 2 , NH 3 , and CO 2 gas molecules by employing DFT and NEGF theories.…”
Section: Introductionmentioning
confidence: 99%
“…32 The heterostructures have drawn attention due to their interesting electric and transport properties aer the successful synthesis by different research groups. [33][34][35][36] These systems are widely used in potential applications including sensing toxic gases due to the high sensitivity and chemical reactivity. [37][38][39] Recently, in 2019, Souza et al investigated the gas sensing properties of graphene/h-BN heterostructure for NO, NO 2 , NH 3 , and CO 2 gas molecules by employing DFT and NEGF theories.…”
Section: Introductionmentioning
confidence: 99%
“…PdSe2), metal monochalcogenides (e.g., GaS), black-phosphorus, black-arsenic, metal trichlorides (RuCl3), and magnetic compounds (Fe3GeTe2) [12]. Hence, it represents a powerful method for the realization of artificial vdW heterostructures [13,14,15] and hybrid 2D/bulk semiconductor devices [16,17,18].…”
mentioning
confidence: 99%
“…Bulk materials WS 2 are semiconductors with an indirect band gap of approximately 1 eV, which becomes a direct bandgap of 1.8-2 eV upon the formation of nanosheets. 7,8 It is accompanied by the appearance of luminescence, which is absent in the bulk material. The maximum luminescence signicantly depends on the size distribution of the layers.…”
Section: Introductionmentioning
confidence: 99%