Temperature-dependent resistivity of alternative metal thin films

Siniscalchi, Marco; Tierno, Davide; Moors, Kristof; Tőkei, Zsolt; Adelmann, Christoph

doi:10.1063/5.0015048

Cited by 7 publications

(11 citation statements)

References 30 publications

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“…The results are also consistent with initial experiments on Ru thin films indicating bulk TCR values for Ru films as thin as 3 nm (not shown). This will be the topic of a forthcoming publication [51].…”

Section: Cu Bulk Tcr Cu Bulk Tcr H = 3 Nm H = 5 Nm H = 10 Nm H = 20 N...mentioning

confidence: 97%

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Adelmann

2019

Solid-State Electronics

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Several issues concerning the applicability of the temperature coefficient of the resistivity (TCR) method to scaled interconnect lines are discussed. The central approximation of the TCR method, i.e. the substitution of the interconnect wire TCR by the bulk TCR becomes doubtful when the resistivity of the conductor metal is strongly increased by finite size effects. Semiclassical calculations for thin films show that the TCR deviates from bulk values when the surface roughness scattering contribution to the total resistivity becomes significant with respect to grain boundary scattering, an effect that might become even more important in nanowires due to their larger surface-to-volume ration. In addition, the TCR method is redeveloped to account for line width roughness. It is shown that for rough wires, the TCR method yields the harmonic average of the cross-sectional area as well as, to first order, the accurate value of the resistivity at the extracted area. Finally, the effect of a conductive barrier or liner layer on the TCR method is discussed. It is shown that the liner or barrier parallel conductance can only be neglected when it is lower than about 5 to 10% of the total conductance. It is furthermore shown that neglecting the liner/barrier parallel conductance leads mainly to an overestimation of the cross-sectional area of the center conductor whereas its resistivity is less affected.

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Section: Cu Bulk Tcr Cu Bulk Tcr H = 3 Nm H = 5 Nm H = 10 Nm H = 20 N...mentioning

confidence: 97%

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Adelmann

2019

Solid-State Electronics

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“…Additional calculations for thin slabs of MoP are shown in Figures S9 and S10 (Supporting Information). [ 41–45 ]…”

Section: Methodsmentioning

confidence: 99%

Topological Metal MoP Nanowire for Interconnect

et al. 2023

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of interconnects due to its ever-increasing resistivity that stems from surface and grain boundary electron scattering. [3] The high resistivity of current Cu interconnects can account for up to 35% of total signal delays and nearly half of dynamic power dissipation in computer chips. [4] Thus, future energy-efficient computing technologies require breakthroughs in interconnect technologies, [5] particularly in new interconnect materials.Topological semimetals are promising materials for low resistance interconnects as their topologically protected surface electrons are forbidden to backscatter. [6][7][8] Several experimental studies on nanostructured topological semimetals show promising results. The Weyl semimetal NbAs, for example, exhibit a factor of ten decrease in resistivity from bulk crystals (35 µΩ cm) to nanobelts (≈3 µΩ cm) at room temperature. [9] Similarly, recent theoretical results from IBM predict that the multifold fermion system CoSi would exhibit lower resistivity than Cu at very small dimensions as the current conduction is dominated by Fermi-arc surface states. [10] Among recently reported topological metals, molybdenum phosphide (MoP) is a simple binary compound that was predicted [11] and experimentally confirmed to host topologically protected fermions. [12] Single crystal MoP shows extremely low resistivity and high carrier density, [13] representing an exciting opportunity to potentially replace Cu interconnects. In this work, we report The increasing resistance of copper (Cu) interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7 nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising candidates to potentially replace current Cu interconnects. Here, we report the unprecedented resistivity scaling of topological metal molybdenum phosphide (MoP) nanowires, and it is shown that the resistivity values are superior to those of nanoscale Cu interconnects <500 nm 2 cross-section areas. The cohesive energy of MoP suggests better stability against electromigration, enabling a barrier-free design . MoP nanowires are more resistant to surface oxidation than the 20 nm thick Cu. The thermal conductivity of MoP is comparable to those of Ru and Co. Most importantly, it is demonstrated that the dimensional scaling of MoP, in terms of line resistance versus total cross-sectional area, is competitive to those of effective Cu with barrier/liner and barrier-less Ru, suggesting MoP is an attractive alternative for the scaling challenge of Cu interconnects.

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“…First of all, when we explore in more detail the Ta/Co bilayer, Ta in our film stacks has a resistivity 180 µΩ cm, which is ∼ 4-5 times higher than Co (40 µΩ cm) and, therefore, it is anticipated that most of the charge current flows through the Co layer. The resistivity of Co was taken from the literature for the same thin film thickness [49,55], while the resistivities of Ta and Pt were calculated using the parallel resistor model with known Co resistivity. Thus, when Pt is added on top, the charge current distribution changes.…”

Section: A Harmonic Hall Voltage Analysis: Sots and Thermal Effectsmentioning

confidence: 99%

Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems

Moskaltsova¹,

Dyck²,

Schmalhorst³

et al. 2021

Preprint

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We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for inplane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and unidirectional spin Hall magnetoresistance (USMR) is achieved by introducing the second heavy metal (HM) with the opposite sign of the spin Hall angle. The extracted SOT efficiencies are larger for the trilayers as compared to the bilayers, confirming the enhanced values reported for the trilayers with perpendicularly magnetized Co. The maximum effective spin Hall angle found for the Pt/Co/Ta trilayer reaches θSH = 20 %. The USMR of the trilayer yields up to 27% higher effect as for the respective bilayers with the largest effective USMR amplitude of -0.32 × 10 −5 for the Pt/Co/Ta trilayer at a charge current density of 10 7 A/cm 2 .

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Temperature-dependent resistivity of alternative metal thin films

Cited by 7 publications

References 30 publications

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

On the extraction of resistivity and area of nanoscale interconnect lines by temperature-dependent resistance measurements

Topological Metal MoP Nanowire for Interconnect

Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems

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