Temperature-dependent resistive switching behaviour of an oxide memristor

Kumari, Karuna; Majumder, S.; Thakur, Ajay D.; Ray, Soumya Jyoti

doi:10.1016/j.matlet.2021.130451

Cited by 19 publications

(10 citation statements)

References 13 publications

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“…This has motivated the exploration of wide bandgap materials for application in memristors that operate at high temperatures. Primary filament-type memristive materials, such as TiO 2 ( E g = 3.0 eV) and HfO 2 ( E g = 5.7 eV), have been studied by considering the temperature dependence of electrical properties, and thus far resistive switching operations have been reported at up to 373 K 30 – 34 . Recently, higher-temperature operation at 613 K has been demonstrated in filament-type MoS 2− x O x memristors fabricated on a two-dimensional material platform 35 .…”

Section: Introductionmentioning

confidence: 99%

High-temperature operation of gallium oxide memristors up to 600 K

Sato

Hayashi

Masaoka

et al. 2023

Sci Rep

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Memristors have attracted much attention for application in neuromorphic devices and brain-inspired computing hardware. Their performance at high temperatures is required to be sufficiently reliable in neuromorphic computing, potential application to power electronics, and the aerospace industry. This work focuses on reduced gallium oxide (GaOx) as a wide bandgap memristive material that is reported to exhibit highly reliable resistive switching operation. We prepared amorphous GaOx films to fabricate Pt/GaOx/indium tin oxide memristors using pulsed laser deposition. Stable resistive switching phenomena were observed in current–voltage properties measured between 300 and 600 K. The conduction mechanism analysis revealed that the resistive switching is caused by the transition between ohmic and space charge limiting current conductions. We elucidated the importance of appropriate control of the density of oxygen vacancies to obtain a high on/off resistance ratio and distinct resistive switching at high temperatures. These results indicate that GaOx is a promising memristor material that can be stably operated even at the record-high temperature of 600 K.

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Section: Introductionmentioning

confidence: 99%

High-temperature operation of gallium oxide memristors up to 600 K

Sato

Hayashi

Masaoka

et al. 2023

Sci Rep

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“…6 Such a device has been demonstrated as an ideal memory component for hardware neural networks from the perspectives of integration density and electrical characteristics. 7−9 Various types of memristors, such as a photonic memristor based on the phosphorene nanoparticles, 10 an organic memristor, 11−13 a 2D material-based memristor, 14 and an oxide-based memristor, 15,16 have been utilized as memory components in the neuromorphic systems. In particular, the oxide memristor has been evaluated as a promising option for artificial synapses in hardware neural networks due to its large scalability and high compatibility with the complementary metal oxide semiconductor.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, it is essential to develop a promising memory device with high integration density to achieve practical neural networks. , The mechanisms and applications of a resistive switching device known as a memristor have been studied using physical models and simulations . Such a device has been demonstrated as an ideal memory component for hardware neural networks from the perspectives of integration density and electrical characteristics. − Various types of memristors, such as a photonic memristor based on the phosphorene nanoparticles, an organic memristor, − a 2D material-based memristor, and an oxide-based memristor, , have been utilized as memory components in the neuromorphic systems. In particular, the oxide memristor has been evaluated as a promising option for artificial synapses in hardware neural networks due to its large scalability and high compatibility with the complementary metal oxide semiconductor. − For the oxide-based memristor, through the application of electric stimuli, a conducting filament (CF) composed of oxygen vacancies forms within an oxide-insulating film, leading to its resistive switching characteristics.…”

Section: Introductionmentioning

confidence: 99%

Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks

Kim,

Lee,

Kim

et al. 2023

ACS Appl. Mater. Interfaces

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Oxide-based memristors have been demonstrated as suitable options for memory components in neuromorphic systems. In such devices, the resistive switching characteristics are caused by the formation of conductive filaments (CFs) comprising oxygen vacancies. Thus, the electrical performance is primarily governed by the CF structure. Despite various approaches for regulating the oxygen vacancy distributions in oxide memristors, controlling the CF structure without modifying the device configuration related to material compatibility is still a challenge. This study demonstrates an effective strategy for localizing CF distributions in memristors by suppressing charge injection during the formation of conducting paths. As the injected charge quantity is reduced in the electroforming process of the oxide memristor, the CF distributions become narrower, leading to more reproducible and stable resistive switching characteristics in the device. Based on these findings, a reliable hardware neural network comprising oxide memristors is constructed to recognize complex images. The developed memristor has been employed as a synaptic memory component in systems without degradation for a long time. This promising concept of oxide memristors acting as stable synaptic components holds great potential for developing practical neuromorphic systems and their expansion into artificial intelligent systems.

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“…In this study, we have successfully developed nonvolatile RRAM devices based on Mg(II)-metallohydrogel (Mg@3AP)mediated metal−semiconductor (MS) junctions. Our strategy of developing a flexible, functional soft gel scaffold may contribute to the field of memory devices based on research and technology for possible uses in neuromorphic computing 42 and data-driven applications like the Internet of Things (IoT), 5G communication, 42 and so forth.…”

Section: ■ Introductionmentioning

confidence: 99%

“…It is a favored choice for next-generation memory design due to its compatibility with CMOS architecture, simple structure, good manufacturability, low cost, low power consumption, high speed, long endurance, and dependability. While oxide materials are extensively researched for RRAM design, − scientists are searching for substitute materials to get over material limitations and improve performance. Such RRAM structures can be created using the metallohydrogel as an active material, which is advantageous for the development of flexible electronics.…”

Section: Introductionmentioning

confidence: 99%

Instantaneous Gelation of a Self-Healable Wide-Bandgap Semiconducting Supramolecular Mg(II)-Metallohydrogel: An Efficient Nonvolatile Memory Design with Supreme Endurance

Karmakar

Roy

Dhibar

et al. 2023

ACS Appl. Electron. Mater.

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An efficient strategy for room-temperature, atmospheric-pressure synthesis of a supramolecular metallohydrogel of the Mg(II) ion, i.e., Mg@3AP, using the metal-coordinating organic ligand 3-amino-1-propanol as a low-molecular-weight gelator (LMWG) in a water medium has been developed. Through a rheological analysis, we looked into the mechanical properties of the supramolecular Mg(II)-metallohydrogel. The self-healing nature of the metallohydrogel is confirmed along with the thixotropic characteristics. Investigation using field emission scanning electron microscopy revealed the hierarchical network of the supramolecular metallohydrogel. The EDX elemental mapping confirms the primary chemical constituents of the metallohydrogel. The possible metallohydrogel formation strategy has been analyzed through FT-IR spectroscopic studies. In this work, Schottky diode structures in a metal–semiconductor–metal geometry structures based on a magnesium(II) metallohydrogel (Mg@3AP) have been constructed, and charge transport behavior has been observed. Furthermore, here, it is demonstrated that the resistive random access memory (RRAM) device based on Mg@3AP exhibits bipolar resistive switching behavior at room temperature and ambient conditions. We have also looked into the switching mechanism through the formation (rupture) of conductive filaments between the metal electrodes to understand the process of resistive switching behavior. With a high on/off ratio (∼100), this RRAM device exhibits remarkable switching endurance over 10,000 switching cycles. These structures are suitable for use in nonvolatile memory design, neuromorphic computing, flexible electronics, and optoelectronics, among other fields, due to their simple fabrication procedures, reliable resistive switching behavior, and stability of the current system.

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Temperature-dependent resistive switching behaviour of an oxide memristor

Cited by 19 publications

References 13 publications

High-temperature operation of gallium oxide memristors up to 600 K

High-temperature operation of gallium oxide memristors up to 600 K

Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks

Instantaneous Gelation of a Self-Healable Wide-Bandgap Semiconducting Supramolecular Mg(II)-Metallohydrogel: An Efficient Nonvolatile Memory Design with Supreme Endurance

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