Memristors have attracted much attention for application in neuromorphic devices and brain-inspired computing hardware. Their performance at high temperatures is required to be sufficiently reliable in neuromorphic computing, potential application to power electronics, and the aerospace industry. This work focuses on reduced gallium oxide (GaOx) as a wide bandgap memristive material that is reported to exhibit highly reliable resistive switching operation. We prepared amorphous GaOx films to fabricate Pt/GaOx/indium tin oxide memristors using pulsed laser deposition. Stable resistive switching phenomena were observed in current–voltage properties measured between 300 and 600 K. The conduction mechanism analysis revealed that the resistive switching is caused by the transition between ohmic and space charge limiting current conductions. We elucidated the importance of appropriate control of the density of oxygen vacancies to obtain a high on/off resistance ratio and distinct resistive switching at high temperatures. These results indicate that GaOx is a promising memristor material that can be stably operated even at the record-high temperature of 600 K.
This paper reports on the fabrication and characterization of crossbar array memristors using amorphous gallium oxide (a-GaOx). The a-GaOx memristors were fabricated by pulsed laser deposition in an argon atmosphere using a platinum bottom electrode and an indium tin oxide (ITO) top electrode. We revealed that the interface engineering at a-GaOx/ITO is the key to demonstrating exemplary resistive switching operation. Stable counter figure-8 hysteresis loops were obtained by voltage application, leading to the successful demonstration of non-volatile retention over 104 s and the multi-level conductance modulation. Furthermore, spike-timing-dependent plasticity (STDP) was artificially implemented by applying pre- and post-spike voltages to the device. Consequently, significant weight-change rates were achieved in the asymmetric STDP imitation, which can be attributed to the reliable resistive switching properties of the device with an extensive dynamic range. These results indicate that the a-GaOx crossbar array memristor is a promising hardware platform for neuromorphic computing applications.
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