We present high efficiency spin filtering behaviour in magnetically rendered phosphorene, doped with various 3d block elements. A phase diagram was obtained depicting the presence of various electronic and magnetic states.
Water harvesting from the ubiquitous moisture is pivotal for delivering fresh water to earth's arid/semiarid regions, and sequestration of iodine from the solution is crucial for environmental safety due to its severe effect on human metabolic processes. In this context, herein, a multifunctional supramolecular metallohydrogel (Mg@TAEA) is synthesized through direct mixing of magnesium nitrate hexahydrate and the low molecular weight gelator tris(2-aminoethyl)amine. Electron microscopy reveals that Mg@TAEA is sculptured in vertically grown welloriented micrometer-sized flakes. The porous crystalline material (52 m 2 /g) was found to be an efficacious host matrix for water harvesting from moisture (847 mg/ g). Mg@TAEA shows effective (513 mg/g) iodine sequestration from solution and adsorption of carbon dioxide (15 mg/g). The wide bandgap semiconducting Mg@ TAEA (3.6 eV) material is a potential candidate for building memory devices, and the I on /I off ratio of the device based on the indium tin oxide (ITO)/Mg@TAEA/Ag heterostructure was found to be ∼62. We further extended our work by analyzing the charge transport properties of the system and found space charge limited conduction (SCLC) and trap-filled SCLC to be responsible for the nonlinear transport behavior observed in the device.
Phosphorene is a promising single elemental two-dimensional layered semiconductor with huge potential for future nanoelectronics and spintronics applications. In this work, we investigated the effect of an organic molecule (benzene) in the close proximity of a Phosphorene nanoribbon. Our extensive calculations reveal that the semiconducting nature of Phosphorene stays unaffected as a result of the molecular adsorption while the transport properties go through drastic changes. Under the influence of dopant atoms and external strain, colossal changes in the conductivity is observed with a maximum enhancement > 1500% which has not been observed earlier. This effect is pretty robust against the (i) variation of system size, (ii) type, location and concentration of dopants and (iii) nature and magnitude of the external strain. Furthermore, we demonstrated how a gate voltage can be used to fine tune the enhanced conductivity response in a Field-effect transistor (FET) structure. Our results provide new direction for Phosphorene based nanoelectronics in applications like sensing, switching where a higher level of conduction can offer better resolution, higher ON/OFF ratio and superior energy efficiency.
We have successfully synthesized the coupled spin dimer systems La(x)Ba(3-x)Mn(2)O(8) (x = 0, 0.2, 0.5, 1) and Ba(3)Mn(2-y)V(y)O(8) (y = 0.5, 1.0, 2.0). The magnetic properties have been investigated as a function of magnetic field and temperature down to 2 K. The susceptibility increases and the intradimer spin exchange interaction decreases with increase of La concentration. The most important finding in higher La doped systems reveals hysteresis in magnetization as a function of magnetic field. The substitution of La (x = 0.5, 1.0) for Ba induces ferromagnetism due to the formation of a mixed valence state of Mn and enhancement of the inter-bilayer ferromagnetic interaction. The replacement of Mn by non-magnetic V destroys the spin gap. La and V doping significantly affect the magnetic properties of the quantum antiferromagnetic compound Ba(3)Mn(2)O(8).
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