Temperature dependent charge conduction and relaxation mechanism study of nano-structure WO<sub>3</sub> by impedance spectroscopy

Khan, Ashfaq Ahmad; Khan, Muhammad Nasir; Iqbal, Mazhar; Majeed, Asif; Jalil, Abdul; Mukhtar, Surayya; Javed, Maria

doi:10.1088/2053-1591/ab5bf0

Cited by 3 publications

(5 citation statements)

References 17 publications

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“…As can be seen, the loss tangent rises with the dopant concentration, which might be due to poor electric insulation of the impurity phase . The obtained values of the tangent delta are consistent with the previous results …”

Section: Results and Discussionsupporting

confidence: 91%

“…The higher grain boundary resistance is ascribed to the chaotic configuration of atoms in the vicinity of the grain boundary, leading to an augmentation in the number of electrons scattering centers by reducing their mobility . The size of the semicircle decreased with increasing temperature, revealing a decreasing resistance, which signifies a lowering of the energy barrier and therefore a significant rise in the concentration of charges . Moreover, the Nyquist plot can be analyzed by employing an equivalent circuit that incorporates lumped parameters.…”

Section: Results and Discussionmentioning

confidence: 99%

“…46 The size of the semicircle decreased with increasing temperature, revealing a decreasing resistance, which signifies a lowering of the energy barrier and therefore a significant rise in the concentration of charges. 38 Moreover, the Nyquist plot can be analyzed by employing an equivalent circuit that incorporates lumped parameters. The selection of these parameters is contingent upon achieving an optimal fit to the measurement taken.…”

Section: Conductivitymentioning

confidence: 99%

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Electrical Conduction Mechanisms in Gd-Substituted WO₃ Ceramics: Experimental and Theoretical Approaches

Nehra,

Rana,

Singh

2024

J. Phys. Chem. C

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W 1−x Gd x O 3 ceramics with (x = 0, 0.02, 0.05, and 0.10) were synthesized via a facile hydrothermal route. The XRD and Raman spectra revealed the monoclinic phase (most stable) formation and successful incorporation of Gd ions into the WO 3 lattice. The scanning electron microscopy images displayed the presence of densely arranged grains with clearly visible grain boundaries. The EDX spectra show that the components are present in the desired stochiometric ratios. This study aims to elucidate the impact of doping of gadolinium over a wide range of frequencies and temperatures on the electrical properties and explore its potential practical applications. A notable shift from nearly constant loss (NCL) to superlinear-power law (SPL) behavior at 373 K is observed, further validated by the dielectric loss spectra. The trends in the frequency exponent indicate that the mechanism of charge transfer follows the quantum mechanical tunneling (QMT) and nonoverlapping small polaron tunneling (NSPT) models. Furthermore, the electrical properties were elucidated by impedance spectroscopy, which shows a non-Debye type relaxation process. The presence of two distinct dynamic mechanisms in the x = 0.05 sample, confirmed by scaling behavior, suggests a nuanced temperature-dependent shift in the primary electrical conduction mechanism.

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Section: Results and Discussionsupporting

confidence: 91%

Section: Results and Discussionmentioning

confidence: 99%

Section: Conductivitymentioning

confidence: 99%

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Electrical Conduction Mechanisms in Gd-Substituted WO₃ Ceramics: Experimental and Theoretical Approaches

Nehra,

Rana,

Singh

2024

J. Phys. Chem. C

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“…The low dielectric loss at 1MHz makes WO 3 a potential material for high-frequency applications. Reproduced or adapted from [ 78 ].…”

Section: Electrical Propertiesmentioning

confidence: 99%

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

et al. 2021

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Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n−doping performance, excellent conductivity, and high electron hall mobility, which is considered as a candidate material for application in optoelectronics. Several reviews on WO3 and its derivatives for various applications dealing with electrochemical, photoelectrochemical, hybrid photocatalysts, electrochemical energy storage, and gas sensors have appeared recently. Moreover, the nanostructured transition metal oxides have attracted considerable attention in the past decade because of their unique chemical, photochromic, and physical properties leading to numerous other potential applications. Owing to their distinctive photoluminescence (PL), electrochromic and electrical properties, WO3 nanostructure−based optical and electronic devices application have attracted a wide range of research interests. This review mainly focuses on the up−to−date progress in different advanced strategies from fundamental analysis to improve WO3 optoelectric, electrochromic, and photochromic properties in the development of tungsten oxide−based advanced devices for optical and electronic applications including photodetectors, light−emitting diodes (LED), PL properties, electrical properties, and optical information storage. This review on the prior findings of WO3−related optical and electrical devices, as well as concluding remarks and forecasts will help researchers to advance the field of optoelectric applications of nanostructured transition metal oxides.

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“…In addition, at high temperatures, thermal energy boosts carriers' mobility, causing an increase in the orientation of the dipoles and an increment in the dielectric constant [32][33][34][35]. Particularly, with increased thermal energy and enhanced carrier mobility, the combination of disrupted dipole orientations [36], increased vibrational motion [37], weakened intermolecular interactions [38], and faster dipole response to electric fields [39,40] all lead to an increment in the dielectric constant at high temperatures. However, as the temperature increases, the electrical conduction losses will also increase, causing a rise in the dielectric loss.…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

Çağırtekin,

Ajjaq,

Barin

et al. 2023

Phys. Scr.

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In this study, the effect of coating p-Si substrates with a pure ZnO layer using the hydrothermal reaction method on the dielectric parameters was reported. The studied dielectric properties of the ZnO/p-Si structure include dielectric constant (ε′), dielectric loss (ε″), ac electrical conductivity (σ AC), and real and imaginary electrical modulus (M′, M″). These properties were investigated using experimental capacitance-frequency (C-f) and conductivity-frequency (G-f) measurements in a frequency range of 20 Hz-1 MHz and a temperature range of 300-420 K. Experimental results show that dielectric parameters are strongly frequency- and temperature-dependent. The dielectric constant showed an increase of about 11 times in the investigated temperature range. At the same time, AC electrical conductivity increased with increasing frequency and temperature. In addition, the electrical modulus was examined, and peaks were observed in M″ values. It was observed that the peaks shifted to the high-frequency region with the increase in temperature. The activation energies were also calculated from the conductivity parameters and a decrease was observed in the activation energies as the frequency increased. Regardless of temperature and frequency, the higher dielectric loss of the fabricated diode compared to its dielectric constant can be advantageous for certain heating or electromagnetic absorption applications.

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Temperature dependent charge conduction and relaxation mechanism study of nano-structure WO₃ by impedance spectroscopy

Cited by 3 publications

References 17 publications

Electrical Conduction Mechanisms in Gd-Substituted WO₃ Ceramics: Experimental and Theoretical Approaches

Electrical Conduction Mechanisms in Gd-Substituted WO₃ Ceramics: Experimental and Theoretical Approaches

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

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Temperature dependent charge conduction and relaxation mechanism study of nano-structure WO3 by impedance spectroscopy

Cited by 3 publications

References 17 publications

Electrical Conduction Mechanisms in Gd-Substituted WO3 Ceramics: Experimental and Theoretical Approaches

Electrical Conduction Mechanisms in Gd-Substituted WO3 Ceramics: Experimental and Theoretical Approaches

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures

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Product

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Temperature dependent charge conduction and relaxation mechanism study of nano-structure WO₃ by impedance spectroscopy

Electrical Conduction Mechanisms in Gd-Substituted WO₃ Ceramics: Experimental and Theoretical Approaches

Electrical Conduction Mechanisms in Gd-Substituted WO₃ Ceramics: Experimental and Theoretical Approaches