Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

Menozzi, Roberto; Umana‐Membreno, Gilberto A.; Nener, Brett; Sozzi, Giovanna; Faraone, Lorenzo; Mishra, Umesh K.

doi:10.1109/tdmr.2008.918960

Cited by 93 publications

(55 citation statements)

References 37 publications

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“…In principle, it is possible to limit the temperature range so that I D varies with T A linearly. 17,23 Indeed, the linear relationship of AlGaN/ GaN HEMTs I D and T A has been verified experimentally by several research groups. 14,24,25 Aside from choosing a suitably narrow intervals of T A and power dissipation P D , wherein the I D dependence on T A can be linearized with accuracy and R TH can be considered constant, no other simplifying assumption is necessary.…”

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confidence: 79%

“…Our structure-based approach offers an alternative avenue in mitigating self-heating problems in AlGaN/GaN HEMTs. Using a technique proposed by Menozzi and co-workers, 17 we extracted the thermal resistance of the MMC and compared it with that of the conventional planar device fabricated on the same chip.…”

mentioning

confidence: 99%

“…20. To extract the thermal resistance (R TH ) of the devices, we applied the technique proposed by Menozzi and co-workers, 17 which only requires measurement of DC I D -V DS curves at different ambient temperature T A . Thus, with the exception of an accurate and stable temperature controller, this technique requires very standard and relatively inexpensive experimental set-up.…”

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confidence: 99%

“…14,24,25 Aside from choosing a suitably narrow intervals of T A and power dissipation P D , wherein the I D dependence on T A can be linearized with accuracy and R TH can be considered constant, no other simplifying assumption is necessary. 17 The physical basis of this method is discussed below.…”

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confidence: 99%

“…The insets in 17 Following step (2) in Fig. 2, from the best fit lines, the values of the slope h for each V DS were then determined.…”

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confidence: 99%

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Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Asubar

Yatabe

Hashizume

2014

Applied Physics Letters

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Dramatic reduction of thermal resistance was achieved in AlGaN/GaN Multi-Mesa-Channel (MMC) high electron mobility transistors (HEMTs) on sapphire substrates. Compared with the conventional planar device, the MMC HEMT exhibits much less negative slope of the I-D-V-DS curves at high V-DS regime, indicating less self-heating. Using a method proposed by Menozzi and co-workers, we obtained a thermal resistance of 4.8 K-mm/W at ambient temperature of similar to 350K and power dissipation of similar to 9W/mm. This value compares well to 4.1 K-mm/W, which is the thermal resistance of AlGaN/GaN HEMTs on expensive single crystal diamond substrates and the lowest reported value in literature

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mentioning

confidence: 79%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

“…The insets in 17 Following step (2) in Fig. 2, from the best fit lines, the values of the slope h for each V DS were then determined.…”

mentioning

confidence: 99%

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Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Asubar

Yatabe

Hashizume

2014

Applied Physics Letters

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Nanoscale fissure formation in Al_xGa_1–xN/GaN heterostructures and their influence on Ohmic contact formation

Smith¹,

Thomson

Zubialevich³

et al. 2016

Physica Status Solidi (a)

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Nanoscale surface fissures on AlxGa1–xN/GaN (15 nm/1 µm) heterostructures grown by metalorganic vapour phase epitaxy (MOVPE) were imaged using tapping‐mode atomic force microscopy (AFM) and electron channelling contrast imaging (ECCI). Fissure formation was linked to threading dislocations, and was only observed in samples cooled under H2 and NH3, developing with increasing barrier layer Al content. No strain relaxation was detected regardless of fissure formation up to barrier layer Al composition fractions of x = 0.37. A reduction of measured channel carrier density was found in fissured samples at low temperature. This instability is attributed to shallow trap formation associated with fissure boundaries. For Ti/Al/Ni/Au Ohmic contact formation to high Al content barrier layers, fissures were found to offer conduction routes to the 2DEG that allow for low resistance contacts, with fissure‐free samples requiring additional optimisation of the metal stack and anneal conditions to achieve contact resistivity of order those measured in fissured samples. In addition, the effects of fissures were found to be detrimental to thermal stability of sheet and contact resistance, suggesting that fissure formation compromises the integrity of the 2DEG.

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High‐Temperature Operation of Al_xGa_1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides

Mollah

Hussain

Floyd

et al. 2020

Physica Status Solidi (a)

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Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

Cited by 93 publications

References 37 publications

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Nanoscale fissure formation in Al_xGa_1–xN/GaN heterostructures and their influence on Ohmic contact formation

High‐Temperature Operation of Al_xGa_1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides

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Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

Cited by 93 publications

References 37 publications

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Nanoscale fissure formation in AlxGa1–xN/GaN heterostructures and their influence on Ohmic contact formation

High‐Temperature Operation of AlxGa1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides

Contact Info

Product

Resources

About

Nanoscale fissure formation in Al_xGa_1–xN/GaN heterostructures and their influence on Ohmic contact formation

High‐Temperature Operation of Al_xGa_1−xN (x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐k Atomic Layer Deposited Gate Oxides