We present a study of the light output power and the thermal impedance of 281 nm emission AlGaN based micropixel LEDs. A modular interconnected micropixel array design is presented which enables dense packing with area and power scalability. We study 5–15 μm diameter stand-alone devices and parallel-connected micropixel arrays with 5 μm interpixel gaps. A standalone 5 μm pixel emits 291 W cm−2 at 10.2 kA cm−2 DC-drive. A power as high as 23 mW (361 W cm−2) was measured at a pulsed-pump current of 800 mA (∼15 kA cm−2) for an interconnected array. These are the smallest and brightest DUV LEDs to date.
We report on Al 0.65 Ga 0.35 N/Al 0.4 Ga 0.6 N metal oxide semiconductor heterojunction field-effect transistor (MOSHFET) with high-k ZrO 2 gate-dielectric deposited using atomic layer deposition process. As extracted from frequency dependent capacitance-voltage (CV ) characteristics, the oxide gates resulted in an interfacial state trap density of ∼2×10 12 cm −2 . A comparative study, on the same material, shows the gate-leakage current of the ZrO 2 MOSHFETs to be lower by five orders; their ON/OFF current ratio (∼10 7 ) to be higher by about four orders and their threshold voltage to decrease (less negative) by 3.5 V with respect to the Schottky gate devices.
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