Temperature dependence of ZnO thin films grown on Si substrate

Kim, Y. Y.; Ahn, Cheol Hyoun; Kang, Si Woo; Kong, Bo Hyun; Mohanta, Sanjay Kumar; Cho, Hyung Koun; Lee, J. Y.; Kim, H. S.

doi:10.1007/s10854-007-9402-6

Cited by 8 publications

(3 citation statements)

References 18 publications

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“…According to Kim et al the formation of the oxide layers at the interface depends on the growth temperature [16]. The structures were grown at 550 1C and the thickness of the SiO 2 layer was about 3 nm.…”

Section: Resultsmentioning

confidence: 99%

“…Several groups of authors reported obtaining ZnO structures on Si using various techniques such as pulsed laser deposition (PLD) [4], metal organic chemical vapor deposition [5], reactive electron beam evaporation [6], RF magnetron sputtering [7,8] the sol-gel method [9] and ultrasonic spray pyrolysis [10], but there are almost no reports on producing such structures with MBE technique. Obtaining good quality quantum nanostructures with MBE will be of great importance for development of optoelectronics on Si.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth conditions and structural properties of ZnMgO nanocolumns on Si(111)

Pietrzyk

Stachowicz

Wierzbicka

et al. 2014

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth conditions and structural properties of ZnMgO nanocolumns on Si(111)

Pietrzyk

Stachowicz

Wierzbicka

et al. 2014

Journal of Crystal Growth

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“…Among them, zinc oxide (ZnO) is a promising metal oxide semiconductor for use in a wide range of nanoelectronic and optoelectronic applications [4][5][6]. ZnO is a II-VI semiconductor with wide band gap (around 3.37 eV), large exciton binding energy (60 meV), high transparency in visible region, and other physical properties, which make it suitable for use in light-emitting diodes (LEDs) [6,7], UV lasers [8], photonic sensors [9][10][11], surface acoustic wave (SAW) devices [12,13], thin film transistors, and optoelectronic devices like transparent conducting system and phosphorous, etc. [14].…”

Section: Introductionmentioning

confidence: 99%

Effects of substrate on surface morphology, crystallinity, and photoluminescence properties of sputtered ZnO nano films

Karamdel

Hadi²,

Dee³

et al. 2011

Ionics

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Effects of substrate on crystallinity, surface morphology, and luminescence properties of radio frequency sputtered zinc oxide (ZnO) thin films were investigated. A variety of materials such as Si (100), Si (111), Al 2 O 3 , quartz, and silicon carbide (SiC) wafers were examined as substrates for deposition of ZnO thin films. The results showed smooth and uniform growth of c-axis orientation films. The thickness of the layers was about 50 nm. The average grain sizes of films were about 10, 13, and 12 nm for Si (111), quartz, and SiC samples, respectively. The deposited film on Al 2 O 3 showed the largest grain size, about 500 nm. Grazing incidence x-ray diffraction patterns of the samples revealed that sputtered layers on Al 2 O 3 and quartz had better crystallinity with higher peak at (002) orientation compared to Si and SiC substrates. Moreover, the Al 2 O 3 sample exhibited a weak peak at position of (100) planes of ZnO too. The photoluminescence spectra of the samples showed a typical luminescence behavior with a broad UV band, including a main peak at around 388 nm and a weak shoulder peak at around 381 nm, corresponding with bound excitonic recombination and free excitonic recombination, respectively. The luminescence peak revealed that the intensity of UV emission is not necessarily dependent on the grain sizes and the micro-structural quality of ZnO films.

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