We report catalyst-free growth of one-dimensional Ga-doped ZnO nanorod arrays on (001) Si substrate with a thin buffer layer by magnetron sputtering. The diameter and length of the nanorods are in the range of 90-144 nm and about 1.38 µm, with an aspect ratio nearly 12:1 and deviation angle ( 6°between the [0001] ZnO direction and substrate normal. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission. The good field emission properties of the nanorod arrays with turn-on field of 2.9 V/µm and enhancement factor of 2027 demonstrate the perfect single-crystalline growth of ZnO:Ga nanorods with similar vertical alignment.
MgTiO, thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Highly oriented MgTi03 thin films were obtained on sapphire (c-plane A1203). MgTiO, thin films deposited on SiO,/Si and platinized silicon (Pt/Ti/SiO,/Si) substrates were polycrystalline nature. MgTi03thin films grown on sapphire were transparent in the visible and had a sharp absorption edge at 280 nm. These MgTiO, thin films had extremely fine feature of surface morphology. i.e., rms roughness of 0.87 nm. Dielectric constant and loss of MgTiO, thin films deposited by PLD were about 24 and 1.58 at IMHz, respectively. These MgTiO, thin films also exhibited little dielectric dispersion. Ke,wL.ordst MgTiO,; Pulsed laser deposition; thin films: microwave * Electronic mail: jclee@yurim.skku.ac.kr [413]/97 Downloaded by [McMaster University] at 08:49 01 December 2014 98441 41 SHINCHUNG KANG et al.
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