Temperature dependence of the work function of ruthenium-based gate electrodes

Alshareef, Husam N.; Wen, Huang-Chun; Luan, H.F.; Choi, Kwang-Il; Harris, H. R.; Senzaki, Yoshihide; Majhi, P.; Lee, B.H.; Foran, Brendan; Lian, Guoda

doi:10.1016/j.tsf.2006.03.026

Cited by 12 publications

(5 citation statements)

References 8 publications

(8 reference statements)

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“…After a decade of intensive studies of HK/MG, theoretical 10,11 and experimental 12 studies on Hfbased dielectrics have shown that FLP is not an intrinsic property of a given dielectric. Instead, it was argued that FLP can occur for specific metal-dielectric combinations, 13 which are therefore termed extrinsic FLP mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys

et al. 2012

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The work function (WF) of several phases of Pt-Al alloys is investigated. A first-principles study is performed to determine the dependence of the vacuum WF (VWF) on the phase, crystallographic orientation, and atomic termination. In parallel, the effective WF (EWF) of these alloys is experimentally measured using metal-oxide semiconductor devices. A detailed microstructural characterization based on x-ray diffraction and transmission electron microscopy allows the comparison between experiment and calculations. It is found that despite the formation of a complex microstructure, the calculated VWF values are in good agreement with the experimental EWF values. The possible VWF range for each phase has a relatively small (∼0.5 eV) span for different orientations and atomic terminations, and it is found that Pt atoms in the terminating plane are more dominant than Al atoms. The results demonstrate that first-principles calculations of the WF of alloys can be used to successfully predict the experimental WF and that knowledge of the microstructure is important for the accuracy of these calculations.

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Section: Introductionmentioning

confidence: 99%

Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys

et al. 2012

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“…The development of micro-and nanoelectronic device generations has driven the search for advanced deposition processes, enabling the growth of thin metal layers [1][2][3] applicable as electrodes in memory capacitors and field-effect transistors. Efforts have been made to integrate high work-function metals, in particular ruthenium, [3][4][5][6][7][8][9] with the gate and memory capacitor technologies. Ruthenium thin films for microelectronics, apart from a few physicalvapor-deposited exceptions, 8,9 have mainly been grown by chemical vapor deposition ͑CVD͒.…”

mentioning

confidence: 99%

“…Efforts have been made to integrate high work-function metals, in particular ruthenium, [3][4][5][6][7][8][9] with the gate and memory capacitor technologies. Ruthenium thin films for microelectronics, apart from a few physicalvapor-deposited exceptions, 8,9 have mainly been grown by chemical vapor deposition ͑CVD͒. 3,4,[10][11][12][13][14][15] Besides CVD, atomic layer deposition ͑ALD͒ 1 has been investigated to find the most feasible way to grow uniform, dense, and conductive Ru films to thicknesses of just a few nanometers over substrates of arbitrary configuration.…”

mentioning

confidence: 99%

High Temperature Atomic Layer Deposition of Ruthenium from N,N-Dimethyl-1-ruthenocenylethylamine

Kukli¹,

Ritala²,

Kemell³

et al. 2010

J. Electrochem. Soc.

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Ruthenium thin films were grown by atomic layer deposition from N,N -dimethyl-1-ruthenocenylethylamine precursor. The growth was examined in the substrate temperature range of 325–500°C . The growth rate increased with the substrate temperature but was quite stable between 400 and 450°C . The films typically consisted of polycrystalline hexagonal ruthenium metal with a resistivity in the range of 10–20μΩcm when the film thickness was 10 nm and above. A resistivity of 49μΩcm could be achieved in the film as thin as 4 nm. Measurements on Al/Al2normalO3/Ru metal-insulator-metal (MIM) capacitors with Ru films as metal electrodes revealed a capacitive voltage behavior typical of MIM structures and appreciably high breakdown voltages.

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“…Because nitrogen in gate oxide is very beam sensitive and can be depleted when exposed to an electron probe over several seconds, it is difficult to obtain very reliable quantitative nitrogen profile. Such analysis becomes even more difficult with the presence of high k dielectrics or metal layers [1].…”

mentioning

confidence: 99%

Challenging Analysis for the Gate Stack and Strained Channel of the Advanced CMOS

2008

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Temperature dependence of the work function of ruthenium-based gate electrodes

Cited by 12 publications

References 8 publications

Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys

Composition and crystallography dependence of the work function: Experiment and calculations of Pt-Al alloys

High Temperature Atomic Layer Deposition of Ruthenium from N,N-Dimethyl-1-ruthenocenylethylamine

Challenging Analysis for the Gate Stack and Strained Channel of the Advanced CMOS

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