Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga<sub>0.85</sub>In<sub>0.15</sub>As quantum well

Popescu, Dan P.; Eliseev, P G; Stintz, A.; Malloy, K.J.

doi:10.1088/0268-1242/19/1/005

Cited by 75 publications

(59 citation statements)

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“…This has been explained in terms of the dependence of carrier capture on the strain-induced potential barrier at the interface between the well and the dot. [24][25][26] Hence the precise nature of the strain fields in and around the QD plays a fundamental role in shaping the optical emission.…”

Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which extends through the GaAsSb and into the GaAs matrix. We compare various existing models used to describe the exchange of group III and V atoms in semiconductors and conclude that commonly used methods that only consider segregation between two adjacent monolayers are insufficient to describe the experimental observations. We show that a three-layer model originally proposed for the SiGe system ͓D. J. Godbey and M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 ͑1997͔͒ is instead capable of correctly describing the extended diffusion of both In and Sb atoms. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain-reduction layer.

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Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning

confidence: 99%

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

et al. 2009

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“…This behavior has been already observed in similar structures and it has been justified by different hypotheses including resonant energy levels between different families, 40 losses of carriers from the WL to the GaAs, 26,36 losses within the barrier itself, 38,39 or losses related to defects. 8,11,37 With the exception of the structure with x ¼ 0.30, three regions can be distinguished in the temperature variation of the recombination time in all samples for QD1 (Fig.…”

Section: -2mentioning

confidence: 67%

“…The observed Arrhenius dependence would be accounted for by two activation energies, as commonly observed in similar QD structures. 26,[36][37][38][39] The sharp decrease of the PL intensity corresponds to a large activation energy (200-400 meV) that depends on the barrier composition (see Tables I and II); the energy difference is consistent with the thermionic electron-hole escape from QD to the WL/WL-QW (for UCL structures).…”

Section: -2mentioning

confidence: 78%

“…7 and 8 for samples with high In content could be attributed to the presence of nonradiative recombination centers related to compositionally graded interfaces and alloy disorder in the high In-content InGaAs UCL. 38 Recently, it has been shown that the formation energy of point defects such as As vacancies into In x Ga 1Àx As alloys strongly depends on x, and is almost maximum when x is larger than 0.25. 48 This observation is in agreement with the linewidth increase of the WL-QW emission observed for the x ¼ 0.30 structure.…”

Section: Model For Exciton Recombination Dynamicsmentioning

confidence: 99%

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The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

Trevisi

Suárez

Seravalli

et al. 2013

Journal of Applied Physics

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The structural and morphological features of bimodal-sized InAs/(In)GaAs quantum dots with density in the low 10 9 cm À2 range were analyzed with transmission electron microscopy and atomic force microscopy and were related to their optical properties, investigated with photoluminescence and time-resolved photoluminescence. We show that only the family of small quantum dots (QDs) is able to emit narrow photoluminescence peaks characteristic of single-QD spectra; while the behavior of large QDs is attributed to large strain fields that may induce defects affecting their optical properties, decreasing the optical intensity and broadening the homogeneous linewidth. Then, by using a rate-equation model for the exciton recombination dynamics, we show that thermal population of dark states is inhibited in both QD families capped by high In content InGaAs layers. We discuss this behavior in terms of alloy disorder and increased density of point defects in the InGaAs pseudomorphic layer. V C 2013 AIP Publishing LLC. [http://dx

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“…This is true, in particular, for the strong PL quenching which occurs within multi-atomic structures. Several studies have tried to improve the adjustment of experimentally observed temperature dependences developing different models [2,6].…”

Section: Introductionmentioning

confidence: 99%

Temperature quenching of photoluminescence of ordered GaInP₂ alloy under different excitation densities

Prutskij

Pelosi

Attolini

2011

Cryst. Res. Technol.

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The photoluminescence (PL) emission from an epi-structure containing an atomically ordered GaInP 2 layer and a GaAs layer was studied under excitation power densities of 0.03 -3 W/cm 2 at temperatures of 10 to 300 K. The quenching of the integrated PL intensity from both: the GaInP 2 and the GaAs layers is stronger under low excitation, than under high excitation density. The temperature dependence, however, have different shapes being the PL decay observed for the GaInP 2 layer stronger than that for the GaAs layer. Comparing the temperature dependence of the PL intensity from the ordered GaInP 2 and the GaAs layers under different excitation densities and analyzing them together, we conclude that the inhomogeneity of the ordered layer is responsible for the different temperature behavior of the GaInP 2 alloy PL emission. To explain the experimentally observed PL intensity temperature dependence an additional nonradiative recombination mechanism due to a thermally activated escape of the carriers from its confinement within regions of lower bandgap has to be taken into account.

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Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga_0.85In_0.15As quantum well

Cited by 75 publications

References 29 publications

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

Temperature quenching of photoluminescence of ordered GaInP₂ alloy under different excitation densities

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Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga0.85In0.15As quantum well

Cited by 75 publications

References 29 publications

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

The effect of high-In content capping layers on low-density bimodal-sized InAs quantum dots

Temperature quenching of photoluminescence of ordered GaInP2 alloy under different excitation densities

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Temperature dependence of the photoluminescence emission from InAs quantum dots in a strained Ga_0.85In_0.15As quantum well

Temperature quenching of photoluminescence of ordered GaInP₂ alloy under different excitation densities