Temperature dependence of the diode ideality factor in CuInS2-on-Cu-tape solar cells

Verschraegen, Johan; Penndorf, J.

doi:10.1016/j.tsf.2004.11.006

Cited by 36 publications

(21 citation statements)

References 9 publications

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“…In this regime, n reaches 3.6 and remains approximately constant with temperature. This observation is in contradiction with the trend observed in other heterojunctions where n decreases with increasing temperature [19,20]. Such an anomalous n value indicates that the current is not limited by drift nor by diffusion, but gives evidence of the presence of alternative transport mechanisms such as space charge limited current (SCLC).…”

Section: Discussioncontrasting

confidence: 80%

Amorphous silicon diamond based heterojunctions with high rectification ratio

Boutchich

Alvarez

Diouf

et al. 2012

Journal of Non-Crystalline Solids

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Section: Discussioncontrasting

confidence: 80%

Amorphous silicon diamond based heterojunctions with high rectification ratio

Boutchich

Alvarez

Diouf

et al. 2012

Journal of Non-Crystalline Solids

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“…Due to distributed diode effects and the probability of recombination within the subcell base regions, the ideality factor for the three junctions is typically greater than 3. In general, the ideality factor is expected to decrease as temperature (and intrinsic doping levels) increase, 6 but such a trend is not Figure 6.…”

Section: Results and Analysismentioning

confidence: 99%

Concentrator multijunction solar cell characteristics under variable intensity and temperature

Kinsey¹,

Hébert²,

Barbour³

et al. 2008

Progress in Photovoltaics

213

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The performance of multijunction solar cells has been measured over a range of temperatures and illumination intensities. Temperature coefficients have been extracted for three-junction cell designs that are in production and under development. A simple diode model is applied to the three-junction performance as a means to predict performance under operating conditions outside the test range. These data may be useful in guiding the future optimization of concentrator solar cells and systems.

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“…Temperature dependent J SC - V OC measurements were performed at different illumination intensities to investigate recombination characteristics [21]. …”

Section: Resultsmentioning

confidence: 99%

Single-graded CIGS with narrow bandgap for tandem solar cells

Feurer

Bissig

Weiss

et al. 2018

Science and Technology of Advanced Materials

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Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

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Temperature dependence of the diode ideality factor in CuInS2-on-Cu-tape solar cells

Cited by 36 publications

References 9 publications

Amorphous silicon diamond based heterojunctions with high rectification ratio

Amorphous silicon diamond based heterojunctions with high rectification ratio

Concentrator multijunction solar cell characteristics under variable intensity and temperature

Single-graded CIGS with narrow bandgap for tandem solar cells

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