Amorphous silicon diamond based heterojunctions with high rectification ratio

Boutchich, Mohamed; Alvarez, José; Diouf, Djicknoum; Cabarrocas, Pere Roca i; Liao, Meiyong; Imura, Masataka; Koide, Yasuo; Kleider, Jean‐Paul

doi:10.1016/j.jnoncrysol.2011.12.067

Cited by 13 publications

(5 citation statements)

References 17 publications

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“…8. The values ranged from 2516.98 to 3.00, 6772.55 to 2.31, 12480.33 to 6.45 and 6782.23 to 9.35 for CAM, CAMCr-1, CAMCr-2 and CAMCr-3, respectively, for temperature range of 300 to 500 K. Such range of RR is close to the values obtained by Boutchich et al [24] and Yuan [25]. The calculated rectification ratios are shown in Fig.…”

Section: Thermal Analysis Of the Alloyssupporting

confidence: 86%

New type of Schottky diode-based Cu–Al–Mn–Cr shape memory material films

et al. 2016

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Cr-doped CuAlMn shape memory alloys were produced by arc melting method. The effects of Cr content on microstructure and transformation parameters of were investigated. The alloys were characterized by X-ray analysis, optical microscope observations and differential scanning calorimetry measurements. The grain size of the alloys was decreased by the addition of Cr into CuAlMn alloy system. The martensite transformation temperature was shifted both the lower temperature and higher temperature with the addition of chromium. This change was explained on the basis of the change in the thermodynamics such as enthalpy, entropy and activation energy values. The obtained results indicate that the phase transformation temperatures of the CuAlMn alloy system can be controlled by addition of Cr. We fabricated a Schottky barrier diode and observed that ideality factor and barrier height increase with increasing temperature. The diodes exhibited a thermal sensor behavior. This indicates that Schottky diode-based Cu-Al-Mn-Cr shape memory material films can be used as a sensor in high-temperature measurement applications.

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Section: Thermal Analysis Of the Alloyssupporting

confidence: 86%

New type of Schottky diode-based Cu–Al–Mn–Cr shape memory material films

et al. 2016

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“…It is a noncrystalline form of silicon having chaotic structure and compared with monocrystalline silicon; it has higher rate of light absorption (approximately 40 times) 110 . Due to its random arrangement, it produces 1.7-eV band gap, 111 compared with c-Si with band gap of 1.12 eV. This wide band gap of a-Si support it to absorb more visible spectrum than infrared spectrum.…”

Section: Amorphous Silicon (A-si)mentioning

confidence: 99%

The progression of silicon technology acting as substratum for the betterment of future photovoltaics

Singh

Agrahari

2019

Int J Energy Res

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Summary To solve energy crisis, generation of clean and renewable energy sources are highly recommended. It not only solve energy‐related matters but also resolves environmental issues. A great number of renewable energy sources are present nowadays to resolve aforementioned issues, out of which photovoltaic modules is the preferable technology over others. Silicon is the native element to be used in photovoltaic module, due to its reasonable cost and band gap. The deciding parameters to harness solar energy to electricity rely upon solar irradiance and weather conditions. Here, we describe the rapid transformation of silicon as photovoltaic solar cell material that transfigured the photovoltaic industry. The photovoltaic industry initiated with monocrystalline silicon and multicrystalline silicon solar cell having conversion efficiency reached up to approximately 22.9% and 20.8%, respectively. The contemporary outburst for the trade of photovoltaic industry is due to the high manufacturing cost of silicon solar panels, which provided a chance for researchers to quest for advanced technology. It gave an opportunity for thin film solar cell to infiltrate in the market. This technology reduced the cost but on the expense of lower conversion efficiency.

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“…Due to random structure, a-Si has a high band gap of 1.7 eV [62] and hence, compared to mono-crystalline silicon, it has 40 times higher rate of light absorptivity [63]. It also holds the first position in current market amongst all thin film materials.…”

Section: Amorphous Silicon (A-si) Solar Cellmentioning

confidence: 99%

Recent Progressive Status of Materials for Solar Photovoltaic Cell: A Comprehensive Review

Muhammad¹,

WAZIRI²,

Shitu³

et al. 2019

SJEE

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Due to increase in demand of electricity and high environment hazard cause by fossil fuel in generation electricity, renewable energy (such as solar energy, wind energy and so on) researches are becoming mandatory to researchers especially scientists and engineers and in solar energy generation an electronic device is used to convert energy from sun into electricity which is known as solar photovoltaic cell and the efficiency of this device is improving by improving the materials used in manufacturing it. This paper was aimed to review the status of these materials for solar photovoltaic cell up to date, from the review it was discovered that the materials are classified based on the generations whereby their efficiencies are increasing from first generation to third generation. And the current market is mainly covered by the first two generations. The first generation comprises well-known medium/low cost technologies that lead to moderate yields. The second generation (thin-film technologies) includes devices that have lower efficiency albeit are cheaper to manufacture. The third generation presents the use of novel materials, as well as a great variability of designs, and comprises expensive but very efficient cells. Although there is fourth generation which their performance and stability was yet to be found as the review disclosed.

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Amorphous silicon diamond based heterojunctions with high rectification ratio

Cited by 13 publications

References 17 publications

New type of Schottky diode-based Cu–Al–Mn–Cr shape memory material films

New type of Schottky diode-based Cu–Al–Mn–Cr shape memory material films

The progression of silicon technology acting as substratum for the betterment of future photovoltaics

Recent Progressive Status of Materials for Solar Photovoltaic Cell: A Comprehensive Review

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