Temperature dependence of substrate current in silicon CMOS devices

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

“…It has been found that the GIDL is significant for devices without LDD and with LDD doped at ~~c i e n t l y high doses [34]. It is generally found that the GIDL current decreases substantially (by almost one order of magnitude) as the temperature is reduced.…”

“…9 shows typical variations with temperature of the GDL coefficients A* and B*. The exponential coefficient is nearly constant with temperature and close to the theoretical value (30-40MVlcm) [34]. In contrast, A* is found to decrease monotonically as the temperature is reduced.…”

“…A study of the substrate current in a MOS transistor is thus mandatory for the qualification of CMOS technology for cryogenic operation, In this section, some results about the temperature dependence of the impact ionization current in MOS devices are presented. According to our findings, the classical substrate current model is found to be applicable down to near liquid helium temperature [28].…”

“…This section summarizes the GIDL results obtained in MOSFETs operated under cryogenic condition. To this purpose, the GIDL phenomenon has been investigated as a function of temperature (20-300K) on CMOS transistors issued from various technologies with and without LDD's [34].…”

Device Physics and Electrical Performance of Bulk Silicon Mosfets

“…It has been found that the classical substrate current model is applicable down to near liquid helium temperature [64]. Figure 22 shows typical variations of the maximum substrate current with temperature for constant drain voltage.…”