Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

Ghibaudo, G.

doi:10.1051/jp4:1996301

Cited by 15 publications

(10 citation statements)

References 13 publications

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“…New materials are being developed for high temperature applications, such as silicon carbide [1,2] and gallium nitride [3]. But silicon based electronics is still the most used in many industrial fields [4,5] and Metal-Oxide-Semiconductor is the dominant structure. The gate oxide exhibits charge built up resulting from operating in high temperature [6].…”

Section: Introductionmentioning

confidence: 99%

Temperature effect on an N‐channel commercial VDMOSFET transistor

Abboud

Salame

Cuminal

et al. 2011

Phys. Status Solidi (c)

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High temperature effect on MOSFET devices was evaluated by exposing the silicon devices to a temperature value above the normal operating range in order to study the device behavior under extreme conditions. Measurements show an increasing in the saturation drain‐source current and the reverse drain‐source current with temperature while the transistor threshold voltage and the diffusion voltage of the integrated pn junction were decreased. The carrier's mobility shows an increasing with temperature while the drain‐source on‐resistance was decreased. Switching times are also investigated as function of temperature and important variations are obtained on the device turn‐on and turn‐off times. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Temperature effect on an N‐channel commercial VDMOSFET transistor

Abboud

Salame

Cuminal

et al. 2011

Phys. Status Solidi (c)

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“…Indeed, below 150 K, the freeze-out effect of the doping impurities leads to an increase of the parasitic series resistance as reported in [25]. This effect is particularly enhanced in LDD and depletion-mode devices [42].…”

Section: Behavior Of the Series Resistance At Low Temperaturementioning

confidence: 66%

“…), similar low temperature research and deep analyses started on SOI MOSFETs, when focusing on the operation mode [19,20], threshold voltage [21,22], accentuated self-heating phenomenon [23], and parameters' extraction [24,25].…”

Section: Introductionmentioning

confidence: 99%

Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

Karsenty

Chelly

2014

Active and Passive Electronic Components

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The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was increased, the opposite effect was observed for GRC. The low field electron mobility and series resistance SD values were extracted using a method based on Y-function for both the temperatures. If SD low values were found for UTB, very high values (>1 MΩ) were extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm 2 /Vs) and is decreasing by lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of the Yanalysis in discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous electrical behavior.

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“…Depletion mode quantum well channel (QWC) MODFETs function well down to very low temperatures because the amount of carriers in the QWC stay relatively abundant despite the freeze-out of the supply layer [3]. The freeze-out of the LDD doping [2] does not inhibit contacting the channel since the degenerately doped HDD layer is still in contact with the populated QWC. Moreover, at higher source-drain bias, impact ionisation overcomes partly the increased access resistance to the channel due to the freeze-out of carriers [7].…”

Section: Resultsmentioning

confidence: 99%

“…Low-temperature operation of Si MOSFETs has shown promising improvements in their operation [2]. The decrease in temperature increases carrier mobility and decreases gate leakage currents.…”

Section: Introductionmentioning

confidence: 99%