“…The crystal is easily grown in large dimension from a melt of congruent composition by the Czochralski technique, and it has high diffraction efficiency and long information conservation time [4] . However, its applications in holographic memory devices are severely limited because of lower optical damage resistance [5,6] . Doped with the optical damage resistant additives like Mg, Zn, In and Sc [7][8][9][10] ,the laser-induced optical damage of LiNbO 3 can be greatly degraded Recently, Zr was reported to be a light-induced scattering resistance impurity, and it was more effective to suppress the light-induced scattering than other elements [11] .…”