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the pursuit of electric-field-controlled magnetism. [2] BFO is part of a larger family of ferroelectric oxides, important compounds that are relevant in the fields of optical modulation, [3] data storage, [4,5] actuation, [6] and sensing. [7] While many of these established applications are based on bulk samples (either single crystals or ceramics), there has recently been a substantial drive to exploit and enhance the desirable functional properties of ferroelectric oxides in thin film form. [8][9][10] Epitaxial strain [11] is a powerful tool in this context: tuning the structure of thin films by strain can bring about, for example, strong modification of ferroelectric polarization and transition temperatures, [12] spin configurations, [13] and magnetic and magneto-transport properties. [14] A wide range of remarkable functionalities has been shown in BFO thin films, [15] such as a tuneable ferroelectric domain structure, [16] strongly strain-dependent magnetic structure, [17] and electric-field sensitive magnetic functionalities. [18,19] While the bulk parent compound of BFO is rhombohedral (R'), a peculiar aspect of thin film BFO is the formation, under strong (≈4%) compressive strain, of a giant axial ratio tetragonal-like (T') polymorph. [20,21] This change in structure is concomitant with a modification of the oxygen coordination (from octahedral to square pyramidal) and drastic changes in optical [22] and piezoelectric responses, [23] and magnetic properties. [24] From an optical point of view, BFO has a band gap that is rather low for ferroelectric oxides, [25] and it exhibits a significant bulk photovoltaic effect, [26] pushing it into the realm of optical research in the hope of using it in energy harvesting, photocatalysis or optical devices. [22] Given the significant general interest of ferroelectrics for photovoltaic applications, [27] it is important to obtain a stronger understanding of the influence of growth parameters and other factors on the optical properties of BFO thin films. In addition, significant size effects, related to microstrain and oxygen content, have been shown to influence the optical response of BFO nanoparticles. [28] Although a large body of literature regarding optical properties (particularly the band gap) for BFO in the form of thin films exists, there is a large dispersion in the data, with reported values for R' BFO ranging from 2.65 to 2.82 eV. For A detailed structural and optical band gap characterization study for more than 40 epitaxial bismuth ferrite (BiFeO 3 -BFO) thin films, measured by X-ray diffraction, atomic force microscopy, and optical transmission spectroscopy, is reported. The films are grown in different deposition systems to varying thicknesses (10-140 nm), on several substrates, and under different growth and cooling conditions. Using the results and literature data, first it is shown that the band gap measured by transmission is systematically lower than the gap found by ellipsometry, suggesting that sufficient caution must be exercised when comparing...
the pursuit of electric-field-controlled magnetism. [2] BFO is part of a larger family of ferroelectric oxides, important compounds that are relevant in the fields of optical modulation, [3] data storage, [4,5] actuation, [6] and sensing. [7] While many of these established applications are based on bulk samples (either single crystals or ceramics), there has recently been a substantial drive to exploit and enhance the desirable functional properties of ferroelectric oxides in thin film form. [8][9][10] Epitaxial strain [11] is a powerful tool in this context: tuning the structure of thin films by strain can bring about, for example, strong modification of ferroelectric polarization and transition temperatures, [12] spin configurations, [13] and magnetic and magneto-transport properties. [14] A wide range of remarkable functionalities has been shown in BFO thin films, [15] such as a tuneable ferroelectric domain structure, [16] strongly strain-dependent magnetic structure, [17] and electric-field sensitive magnetic functionalities. [18,19] While the bulk parent compound of BFO is rhombohedral (R'), a peculiar aspect of thin film BFO is the formation, under strong (≈4%) compressive strain, of a giant axial ratio tetragonal-like (T') polymorph. [20,21] This change in structure is concomitant with a modification of the oxygen coordination (from octahedral to square pyramidal) and drastic changes in optical [22] and piezoelectric responses, [23] and magnetic properties. [24] From an optical point of view, BFO has a band gap that is rather low for ferroelectric oxides, [25] and it exhibits a significant bulk photovoltaic effect, [26] pushing it into the realm of optical research in the hope of using it in energy harvesting, photocatalysis or optical devices. [22] Given the significant general interest of ferroelectrics for photovoltaic applications, [27] it is important to obtain a stronger understanding of the influence of growth parameters and other factors on the optical properties of BFO thin films. In addition, significant size effects, related to microstrain and oxygen content, have been shown to influence the optical response of BFO nanoparticles. [28] Although a large body of literature regarding optical properties (particularly the band gap) for BFO in the form of thin films exists, there is a large dispersion in the data, with reported values for R' BFO ranging from 2.65 to 2.82 eV. For A detailed structural and optical band gap characterization study for more than 40 epitaxial bismuth ferrite (BiFeO 3 -BFO) thin films, measured by X-ray diffraction, atomic force microscopy, and optical transmission spectroscopy, is reported. The films are grown in different deposition systems to varying thicknesses (10-140 nm), on several substrates, and under different growth and cooling conditions. Using the results and literature data, first it is shown that the band gap measured by transmission is systematically lower than the gap found by ellipsometry, suggesting that sufficient caution must be exercised when comparing...
This paper discusses Gaussian laser transmission in double-refraction crystal whose incident light wavelength is within its absorption wave band. Two scenarios for coupled radiation and heat conduction are considered: one is provided with an applied external electric field, the other is not. A circular heat source with a Gaussian energy distribution is introduced to present the crystal's light-absorption process. The electromagnetic field frequency domain analysis equation and energy equation are solved to simulate the phenomenon by using the finite element method. It focuses on the influence of different values such as wavelength, incident light intensity, heat transfer coefficient, ambient temperature, crystal thickness, and applied electric field strength. The results show that the refraction index of polarized light increases with the increase of crystal temperature. It decreases as the strength of the applied electric field increases if it is positive. The mechanism of electrical modulation for the thermo-optical effect is used to keep the polarized light's index of refraction constant in our simulation. The quantitative relation between thermal boundary condition and strength of applied electric field during electrical modulation is determined. Numerical results indicate a possible approach to removing adverse thermal effects such as depolarization and wavefront distortion, which are caused by thermal deposition during linear laser absorption.
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