Temperature dependence of hole drift mobility in high‐purity single‐crystal CVD diamond

Abstract

Hole transport properties in high‐purity single crystal CVD diamond samples were studied using the time of flight technique with optical excitation of the carriers. The measurements were taken at different temperatures in the interval 80–470 K. By varying the intensity of the optical excitation over several orders of magnitude, measurements at different carrier concentrations have been performed. In this way, measurements have been made both in the space charge limited and non space charge limited regimes, with consistent results. The temperature dependence of the low‐field hole drift mobility shows a Tα dependence with α ≈ –1.5, below 350 K. This indicates that acoustic phonon scattering is the dominant scattering mechanism and a very low concentration of ionized impurities in this material. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

“…Temperaturerange-specific implementation of the μ p (T ) relations obtained empirically [20] and experimentally [19], [23] leads to (7) and (8) being a unified description of doping-and temperaturedependent carrier transport μ p (N A , T ) in single-crystal diamond. These are shown graphically in Fig.…”

“…For intrinsic CVD single-crystal diamond layers, Isberg et al [19] have recently extracted from drift mobility measurements a μ p (i)(T ) ∝ T S dependence, where S ≈ −1.55 for T < 343 K attributed to acoustic phonon scattering, and a steeper S ≈ −3.4 dependence for higher temperatures in excess of 343 K, as shown in Fig. 5.…”

“…However, no information on these coefficient parameters is presently available in the literature for single-crystal diamond [27]. Thus, at the current stage of diamond device technology, in order to approximately quantify the blocking capability of diamond power devices in reverse bias, estimated values [6], [19], [20], [23]. TABLE III PARAMETERS DESCRIBING THE UNIFIED HOLE MOBILITY IN SINGLE-CRYSTAL DIAMOND TABLE IV IMPACT IONIZATION COEFFICIENT PARAMETERS OF SELECTED SEMICONDUCTORS for A n,p , B n,p , and c n,p were obtained via extrapolation of coefficient parameters from silicon [28] and silicon carbide [29] based on the bandgap of diamond.…”

Ion spectroscopy — A diamond characterization tool

“…Aiming for precise measurements of the so far missing stopping power of diamond and the corresponding energy-loss of heavy charged particles in it, an electrical characterization method for highquality materials is found, which completes the measurements performed with short-range ionizing sources (e.g., α-particles [8][9][10], UV photons [11]) or with minimum ionizing particles (MIP) [12]). Even if MIPs show similarities to the probes proposed in this article, they generate in contrast weak charge signals and spectra revealing the characteristic asymmetric shape of a Landau distribution [13].…”

Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique

“…It can be used both in vertical 1,[8][9][10][11][12][13][14][15][16][17][18] or lateral configurations [19][20][21] to measure charge trapping, electron and hole mobilities, saturation and drift velocities. In this technique, electron-hole pairs can be created by α-particles 8,16 , pulsed electron beams 22 , pulsed particle beams 23 , pulsed X-rays 24 or by Q-switched UV lasers 1 .…”