Temperature Dependence of GaN HEMT Small Signal Parameters

Darwish, Ali; Ibrahim, Amr A.; Hung, H. Alfred

doi:10.1155/2011/945189

Cited by 22 publications

(11 citation statements)

References 11 publications

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“…R ds is an important parameter that directly influences power added efficiency (PAE) and output power (P out ). The increase in R ds with temperature reduces the decline of power efficiency and P out with temperature [19].…”

Section: Temperature-dependent Rf Characterizationmentioning

confidence: 99%

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Alim

Rezazadeh

Gaquière

2015

Semicond. Sci. Technol.

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This paper investigated the temperature effects on the performance of the AlGaN/GaN high electron mobility transistor (HEMT) with a 150 nm and 250 nm gate length on a SiC substrate over a temperature range of −40 to 150°C including experimental characterization, modelling and analysis by on-wafer measurements up to 50 GHz. All the DC and small signal parameter variations with ambient temperature on the same set of devices have been reported for the first time. The temperature coefficient of all the DC and small signal parameters as well as f t and f max were reported. Some of the extracted equivalent circuit parameters with the theoretical data of the evolution of electrical parameters and the relevant physical equations involved have been compared using the same biasing condition for further accuracy. The theoretical results are shown to be consistent with the extracted data. Some results are also experimentally verified with previous works cited in the paper. The results provide some valuable insights for the underlying physics of the device parameters affected by temperature.

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Section: Temperature-dependent Rf Characterizationmentioning

confidence: 99%

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Alim

Rezazadeh

Gaquière

2015

Semicond. Sci. Technol.

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“…The magnitude and the trend with temperature of the small signal parameters of the two investigated devices agree qualitatively but not quantitatively with the reported GaN‐on‐SiC HEMTs, which could be due to the discrepancy in device structure, geometry, and fabrication. By comparing the extracted values of P ( T 0 ) and β for the two investigated devices, it can be found that they are comparable as their geometries are similar and bias condition are the same.…”

Section: Resultsmentioning

confidence: 47%

“…Previous studies have reported the temperature influence on the small signal parameters of GaN‐on‐SiC HEMTs. Alim et al investigated the small signal parameters as well as their temperature‐dependent behavior of two different technologies, ie, GaAs pHEMT and GaN‐on‐SiC HEMT, and analyzed their differences.…”

Section: Introductionmentioning

confidence: 99%

Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

Zhou²,

Kong³

et al. 2019

Int J Numerical Modelling

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This paper presents the temperature dependence of small signal performance of GaN-on-diamond high electron mobility transistors (HEMTs) at an ambient temperature range from 0°C to 125°C. The temperature influence on the parasitic resistances together with the intrinsic parameters is investigated, and the temperature coefficients of these parameters are extracted from measured data. For comparison, a GaN-on-SiC device is also investigated. These results are important for the development and application of the GaN-on-diamond HEMT technology. KEYWORDSGaN-on-diamond, high electron mobility transistor (HEMT), small signal parameters, temperature dependence

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“…48 The reduction in charge confinement with temperature is expected to increase the feedback capacitance C gd , which may in turn reduce the value of C gs. 49 The magnitude and the trend with temperature of the small signal parameters of the investigated device agree qualitatively but not quantitatively with the reported GaN-on-SiC HEMTs, [45][46][47][48][49] which could be due to the discrepancy in device structure, geometry, and fabrication. Moreover, the comparisons of simulated and measured S-parameters of the 4 × 50 μm device at five different ambient temperatures are shown in Figure 16.…”

Section: Resultsmentioning

confidence: 54%

Improved quasi‐physical zone division model with analytical electrothermal I_ds model for AlGaN/GaN heterojunction high electron mobility transistors

Yong-bo

Wang³

et al. 2019

Int J Numerical Modelling

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An accurate analytical electrothermal drain current (I ds ) model for AlGaN/GaN HEMTs is presented in this letter. The model is implemented into our recently proposed quasi-physical zone division (QPZD) model for demonstration purpose. Compared with the original QPZD model, its electrothermal characteristics are enhanced by involving more fundamental temperature dependent elements. In addition, these elements are derived analytically based on physical mechanisms instead of former pure empirical fitting method. Thus, the extracted parameter values are more close to intrinsic values. An in house 0.15-μm GaN HEMT is used for validation. Compared with the measured data at a wide ambient temperature range (245-390 K), this electrothermal model demonstrates good accuracy to predict the DC characteristics and RF performances of GaN HEMTs.relatively simple while still provides a reasonable prediction on the device performance under different operating conditions. This large-signal modeling approach is usually based on the current and charge sources obtained by integration. 9,10 C. Wang et al 11 presented a temperature dependent large signal model for GaN HEMTs, which includes thermal, trapping, and RF dispersion effects. However, the method proposed in the present paper was to modify the Chalmers model that was originally proposed by I. Angelov 12,13 and is basically an empirical model. Empirical models for GaN HEMTs 14-18 usually contain dozens of fitting parameters, thus hardly offer an opportunity to understand device operation from the physical point of view.Compared with empirical models, physics-based analytical models for GaN HEMTs have been widely caught the attention in recent years 19-25 because they originate from device operation principle and contain most of the device physical parameters and much less empirical ones. Previously, we proposed an analytical model named quasi-physical zone division (QPZD) model 26,27 for GaN HEMTs. Compared with other fully physics-based analytical models, the QPZD model shows some advantages, such as concise formulas with superior accuracy, fewer parameters, better convergence, etc. However, empirical fitting functions are introduced to the electron sheet density n s and the critical electric field E c , which lack of clear physical meanings. Besides, only a few of the temperature dependent elements, such as the pinch off voltage V off and the maximal electron saturated velocity υ sat are included in the model. These two factors may result in unreasonable parameter values. For example, the obtained variation of the low-field mobility μ 0 with temperature is unreasonably large in our previous QPZD model. 27 The aim of this work is to improve the electrothermal characteristics of the QPZD model to incorporate the temperature effects on device performance. The effects of temperature variation on the fundamental elements (ie, ϕ B , E g , μ 0 , υ sat , and k) and also on the deduced ones (ie V off , n s , the thermal resistance R th , the maximal drain current I max , E c ) are inc...

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Temperature Dependence of GaN HEMT Small Signal Parameters

Cited by 22 publications

References 11 publications

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

Improved quasi‐physical zone division model with analytical electrothermal I_ds model for AlGaN/GaN heterojunction high electron mobility transistors

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Temperature Dependence of GaN HEMT Small Signal Parameters

Cited by 22 publications

References 11 publications

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Thermal characterization of DC and small-signal parameters of 150 nm and 250 nm gate-length AlGaN/GaN HEMTs grown on a SiC substrate

Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

Improved quasi‐physical zone division model with analytical electrothermal Ids model for AlGaN/GaN heterojunction high electron mobility transistors

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Improved quasi‐physical zone division model with analytical electrothermal I_ds model for AlGaN/GaN heterojunction high electron mobility transistors