Temperature dependence of Auger recombination in a multilayer narrow-band-gap superlattice

Abstract

Temperature and density-dependent Auger recombination rates are determined for a four-layer broken-gap superlattice designed for suppression of both Auger recombination and intersubband absorption. The structure is intended as the active region of both optically pumped and diode lasers operating in the midwave infrared. Auger recombination and intersubband absorption are thought to be among the primary factors contributing to high-threshold current densities in such devices. Ultrafast time-resolved photoluminescence upconversion was used to measure the Auger rates at lattice temperatures ranging from 50 to 300 K. Results are compared to calculated rates using the temperature-dependent, nonparabolic K-p band structure and momentum-dependent matrix elements. The calculations, which include umklapp processes in the superlattice growth direction, are in excellent agreement with the experimental results. Comparison of these results with those obtained in other mid-IR semiconductor structures verifies Auger suppression. The measured temperature-dependent Auger recombination rates, together with calculations of the gain, provide an upper bound for the characteristic temperature, T 0 ϭ81 K, for lasers utilizing this superlattice as an active region.

Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

“…It was interpreted that such behavior is due to nonradiative Auger recombination processes associated with degenerated electrons, in which the energy released by an electron recombination is immediately absorbed by another electron, and then this energy is dissipated by phonons. Auger process has been thought of as a major reason of nonradiative recombination in semiconductor films [21], quantum well [22], and quantum dots [23]. In wide band gap materials, Auger process depends on the concentration of doping atom and defects in the lattice [4,20].…”

Photoluminescence of ZnO:Ga Thin Films Fabricated by Pulsed Laser Deposition Technique

“…They interpreted that such behavior is due to nonradiative Auger recombination processes associated with degenerated electrons, in which the energy released by an electron recombination is immediately absorbed by another electron, and then this energy is dissipated by phonons. Auger process has been thought of as a major reason of nonradiative recombination in semiconductor films [15], quantum well [16] and quantum dots [17]. In wide band gap materials, Auger process depends on the doping level and becomes important when the doping concentration is above Mott density.…”

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

“…This non-radiative Auger recombination is a density dependent mechanism which usually increases with decreasing band-gap energy and is typically found to be increased monotonically with temperature and carrier density. 45,46 Main Auger recombination processes are divided into two processes of the conduction (C)-C-Chole(H) (CCCH) transition and C-H-H-SO(S) (CHHS) transition. 47 The CCCH process involves one electron transition within the conduction band and another electron transition to the valence band.…”